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MT29F1G08ABBEAH4-ITX:E

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IC FLASH 1GBIT PARALLEL 63VFBGA

HerstellerMicron Technology Inc.
Herstellerteil #MT29F1G08ABBEAH4-ITX:E
Auf Lager1876

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Spezifikationen

Attribut	Wert
PartStatus	Obsolete
BaseProductNumber	MT29F1G08
DigiKeyProgrammable	Verified
MemoryType	Non-Volatile
MemoryFormat	FLASH
Technology	FLASH - NAND
MemorySize	1Gbit
MemoryOrganization	128M x 8
MemoryInterface	Parallel
Voltage-Supply	1.7V ~ 1.95V
OperatingTemperature	-40°C ~ 85°C (TA)
MountingType	Surface Mount
Package	63-VFBGA
SupplierDevicePackage	63-VFBGA (9x11)
Packaging	Tray

Übersicht

Description

The MT29F1G08ABBEAH4-ITX:E is a NAND Flash memory chip manufactured by Micron Technology. It features a storage capacity of 1 gigabit and is part of the SLC (Single-Level Cell) NAND family, which is known for high performance and reliability. The chip operates with a voltage range of 2.7V to 3.6V and a typical operating current of 25mA. It is designed for use in industrial applications, denoted by the "IT" in its part number, indicating industrial temperature range compatibility. This makes it suitable for environments with varying temperatures and demanding conditions. The "X" at the end of the part number signifies a specific packaging and configuration option. The chip is commonly used in devices requiring non-volatile storage, such as embedded systems, consumer electronics, and automotive applications. It supports common NAND interface protocols, ensuring compatibility with a wide range of controllers. The MT29F1G08ABBEAH4-ITX:E offers a balance of durability, speed, and energy efficiency, making it a versatile choice for various storage needs.

Equivalent

The MT29F1G08ABBEAH4-ITX:E is a 1Gb NAND Flash Memory chip by Micron. Equivalent products can include similar NAND Flash Memory chips from other manufacturers, such as the Toshiba TC58NVG0S3HTA00 or Samsung K9F1G08U0D. When looking for equivalents, ensure they match in capacity, interface, voltage, and package type to ensure compatibility with your design. Always check specific datasheets for functional compatibility.

Features

The MT29F1G08ABBEAH4-ITX:E is a NAND Flash memory chip produced by Micron Technology. It features a storage capacity of 1 Gb (gigabit) organized in a single-level cell (SLC) architecture. The chip employs an 8-bit interface, making it suitable for various applications requiring reliable data storage. It operates with a supply voltage ranging from 2.7V to 3.6V, ensuring compatibility with different power environments.
This NAND Flash memory supports fast read and write operations, with page sizes typically set at 2,112 bytes, including spare area. The device can execute random read, sequential read, and program operations, and it provides advanced error correction code (ECC) support to enhance data integrity.
The MT29F1G08ABBEAH4-ITX:E is designed for industrial temperature ranges, making it suitable for applications requiring high endurance and reliability under extreme conditions. It's commonly used in embedded systems, consumer electronics, and other applications where compact and efficient data storage is crucial. The chip is available in a TSOP package, facilitating integration into various hardware designs.

Pinout

The MT29F1G08ABBEAH4-ITX:E is a NAND Flash memory chip produced by Micron Technology. It features a 48-pin TSOP (Thin Small Outline Package).
Functionally, this chip is a 1Gb (128MB) NAND Flash memory device with an 8-bit data bus. It is typically used for storage applications where non-volatile memory is required, such as in embedded systems, consumer electronics, and industrial applications. The device operates at 3.3V and supports standard NAND Flash memory operations like read, program, and erase. It is designed for reliable and efficient data storage and retrieval, offering a good balance between performance and cost for large-volume storage needs.
For detailed pin functions and specific arrangements, you should refer to the datasheet provided by Micron Technology, as it contains comprehensive information about the device's electrical characteristics and pin descriptions.

Manufacturer

The manufacturer of the MT29F1G08ABBEAH4-ITX:E is Micron Technology, Inc. Micron is an American company that specializes in the production of memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron develops a range of semiconductor devices, including dynamic random-access memory (DRAM), NAND flash memory, NOR flash memory, and other solid-state drives (SSDs). Micron's products are used in various applications, from consumer electronics and mobile devices to data centers, automotive systems, and industrial solutions.
Micron is known for its innovation and advancement in the memory and storage industry, often collaborating with other tech companies to push the boundaries of semiconductor technology. The company operates in a highly competitive market, alongside other major players like Samsung and SK Hynix, and it is recognized for its contribution to the evolution of high-performance computing, artificial intelligence, and other cutting-edge technological fields.

Application

The MT29F1G08ABBEAH4-ITX:E is a NAND Flash memory chip commonly used in a variety of applications. These include consumer electronics such as smartphones, tablets, and digital cameras, where it provides storage for files and operating systems. It's also used in industrial applications for data logging and firmware storage, as well as in automotive systems for infotainment and navigation. Additionally, this type of memory is found in solid-state drives (SSDs) for computers and servers, providing fast and reliable data storage solutions. Its versatility makes it suitable for applications requiring durable, non-volatile storage solutions.

Package

The MT29F1G08ABBEAH4-ITX:E is a NAND Flash memory chip from Micron Technology. It comes in a TBGA (Thin Ball Grid Array) package type, which is designed for efficient space utilization in electronic devices, enabling high-density storage solutions.

Frequently Asked Questions

Q: What is the memory density and organization of the MT29F1G08ABBEAH4-ITX:E?
A: It offers 1Gbit of NAND Flash memory organized as 128M x 8 bits, accessed via a parallel interface.

Q: What voltage supply range does this NAND Flash require?
A: It operates at a low voltage supply of 1.7V to 1.95V, ideal for power-sensitive applications.

Q: Is this component suitable for extended temperature environments?
A: Yes, it supports an industrial temperature range of -40°C to +85°C (TA), ensuring stable performance in harsh conditions.

Q: What package type is used for the MT29F1G08ABBEAH4-ITX:E?
A: It comes in a 63-ball VFBGA (9x11mm) surface-mount package, supplied in tray packaging.

Q: Is the memory interface serial or parallel?
A: It uses a parallel memory interface for higher data throughput, typical for legacy NAND Flash designs.

Q: Can this part be used for code storage or only data storage?
A: As a NAND Flash, it is typically used for data storage, not for direct code execution (XIP).

Q: What is the part status for the MT29F1G08ABBEAH4-ITX:E?
A: The part status is Obsolete, so it is recommended for legacy system maintenance or limited-stock purchases only.