MT29F256G08CJABBWP-12IT:B

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MT29F256G08CJABBWP-12IT:B

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IC FLASH 256GBIT PAR 48TSOP I

  • HerstellerMicron Technology Inc.

  • Herstellerteil #MT29F256G08CJABBWP-12IT:B

  • Paket TFSOP-48

  • Auf Lager7428

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Attribut Wert
Package / Case Tray
Part Status Obsolete
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (MLC)
Memory Size 256Gb (32G x 8)
Memory Interface Parallel
Clock Frequency 83 MHz
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount

Übersicht

Description

The MT29F256G08CJABBWP-12IT:B is a NAND Flash memory chip manufactured by Micron Technology. It is designed for use in a range of applications, including smartphones, tablets, laptops, and other computing devices, where high-density storage is required. The chip features a 256Gb (gigabit) storage capacity, utilizing NAND technology that allows for non-volatile storage, meaning it retains data without power.
This particular model is built with a high degree of reliability and performance, with an asynchronous interface for communication. The "-12IT" designation indicates its operating temperature range, making it suitable for industrial applications. The chip is commonly used in SSDs and embedded storage solutions due to its efficiency and durability.
Key features include fast read and write speeds, a compact form factor, and low power consumption, which are critical for mobile and constrained environments. Additionally, it supports advanced error correction and wear-leveling algorithms to enhance data integrity and lifespan. Overall, the MT29F256G08CJABBWP-12IT:B offers a robust solution for high-capacity storage needs.

Equivalent

The MT29F256G08CJABBWP-12IT:B is a NAND flash memory chip. Equivalent products may include similar NAND flash chips from other manufacturers, such as the K9GAG08U0E from Samsung, the TH58TEG8DDJBA8C from Toshiba, and the H27UBG8T2BTR-BC from SK Hynix. These alternatives offer comparable capacities and interfaces but may vary in performance and specific features. Always verify compatibility with your application before selecting a substitute.

Features

The MT29F256G08CJABBWP-12IT:B is a NAND flash memory device manufactured by Micron Technology. It features a storage capacity of 256 Gb and utilizes a multi-level cell (MLC) architecture, allowing for efficient storage of data. The device operates using a single 3.3V power supply and supports a wide temperature range, making it suitable for various applications, including industrial environments.
Key features include a high-speed interface that supports asynchronous and synchronous data transfer modes, enhancing data access and write performance. It also incorporates error correction code (ECC) to improve data integrity and reliability. The device's endurance and retention characteristics are designed to withstand multiple program/erase cycles, making it durable for long-term use.
Additionally, the MT29F256G08CJABBWP-12IT:B is packaged in a 63-ball BGA form factor, which is compact and allows for efficient use of space on printed circuit boards. Its design and specifications make it ideal for use in embedded systems, consumer electronics, and other applications requiring reliable and high-capacity flash storage.

Pinout

The MT29F256G08CJABBWP-12IT:B is a NAND Flash memory chip produced by Micron Technology. It typically features 48 pins, which are standard for TSOP (Thin Small Outline Package) configurations used for NAND Flash. The pins on this chip serve various functions essential for its operation, such as:
1. Power and Ground Pins: These provide the necessary power supply and ground connections to the chip.
2. Data I/O Pins: The chip has multiple data input/output pins, usually 8 (D0-D7), which facilitate data transfer.
3. Control Pins: These include pins like Chip Enable (CE#), Write Enable (WE#), Read Enable (RE#), and Command Latch Enable (CLE) that control the read/write operations.
4. Address and Command Latch Pins: Used to latch address and command inputs.
5. Ready/Busy Output (R/B#): This pin indicates the status of the device operations.
6. Write Protect (WP#): Used to protect the memory from accidental writes.
This chip is used in various applications requiring high-density storage solutions, like solid-state drives and embedded systems. Always refer to the specific datasheet for detailed pin configuration and functions.

Manufacturer

The MT29F256G08CJABBWP-12IT:B is manufactured by Micron Technology, Inc. Micron is a leading global corporation in the semiconductor industry, specializing in the production of memory and storage solutions. The company develops and manufactures DRAM, NAND, NOR, and 3D XPoint memory, which are used in a wide range of computing, networking, and mobile products. Micron serves various markets, including consumer electronics, mobile devices, data centers, automotive, and industrial applications. As a technology company, Micron focuses on innovation in memory and storage solutions to support the growing demand for data processing and storage capabilities in the digital age.

Application

The MT29F256G08CJABBWP-12IT:B is a NAND Flash memory chip commonly used in various applications requiring reliable data storage. Its primary application areas include smartphones, tablets, and other mobile devices for storing operating systems, applications, and user data. It is also used in solid-state drives (SSDs) for personal computers and enterprise storage solutions, offering fast read/write capabilities. Additionally, it finds applications in embedded systems, automotive infotainment systems, industrial automation systems, and consumer electronics like digital cameras and media players, where high-density and non-volatile storage is needed. Its robust performance in diverse environments makes it suitable for both consumer and industrial applications.

Package

The package type for the MT29F256G08CJABBWP-12IT:B is a Ball Grid Array (BGA). Specifically, it comes in a 132-ball BGA package, which is commonly used for memory chips to provide a compact form factor and efficient electrical connections.

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