MT29F2G08ABAEAWP-ITX:E

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MT29F2G08ABAEAWP-ITX:E

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IC FLASH 2GBIT PARALLEL 48TSOP I

  • HerstellerMicron Technology Inc.

  • Herstellerteil #MT29F2G08ABAEAWP-ITX:E

  • Auf Lager7694

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Spezifikationen

Attribut Wert
Part Status Obsolete
Base Product Number MT29F2G08
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 2Gbit
Memory Organization 256M x 8
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 48-TSOP I
Packaging Tray

Übersicht

Description

The MT29F2G08ABAEAWP-ITX:E is a NAND flash memory device manufactured by Micron Technology. It features a 2Gb (256MB) capacity and utilizes a 8-bit I/O interface. This device is designed for high-density storage applications, making it suitable for various consumer electronics, mobile devices, and embedded systems.
Key attributes include a 3V operating voltage, advanced error correction capabilities, and a variety of programming and erasing modes, which enhance its reliability and performance. The device supports asynchronous and conventional NAND operations, facilitating easy integration into existing systems.
Its small form factor and low power consumption make it ideal for portable applications, while supporting high read/write speeds. The "-ITX" designation indicates that the part is intended for industrial temperature ranges, ensuring robust performance in demanding environments.
Overall, the MT29F2G08ABAEAWP-ITX:E is a versatile and reliable NAND flash memory solution for applications requiring efficient and durable data storage.

Equivalent

The MT29F2G08ABAEAWP-ITX:E is a 2GB NAND Flash memory chip. Equivalent products include the Micron MT29F2G08ABAEAWP, Samsung K9GAG08U0M, and Hynix H27UBG8T2BTR. Ensure compatibility with your specific application regarding voltage, package, and interface specifications when considering alternatives.

Features

The MT29F2G08ABAEAWP-ITX:E is a 2Gb NAND Flash memory chip from Micron Technology. Key features include:
1. Density: 2 Gigabits (256 Megabytes) of storage.
2. Interface: ONFI (Open NAND Flash Interface) compliant, enabling compatibility and standardization.
3. Page Size: Supports 4KB page sizes, enhancing data management and performance.
4. Block Size: Features a block size of 128KB, allowing for efficient data organization and wear leveling.
5. Read/Write Speed: Offers high-speed read/write operations, suitable for various applications.
6. Erase Cycle: Designed for extended endurance with numerous program/erase cycles.
7. Temperature Range: Operates across a wide temperature range, making it suitable for various environments.
8. Architecture: Based on NAND Flash technology, enabling cost-effective storage solutions.
This chip is ideal for applications such as mobile devices, automotive systems, and consumer electronics where reliable and efficient storage is essential.

Pinout

The MT29F2G08ABAEAWP-ITX:E is a NAND flash memory device from Micron Technology. It features a total of 48 pins.
The primary functions of these pins include:
1. Data I/O: Pins for data transfer (DQ0-DQ7) supporting 8-bit data bus.
2. Address Lines: Pins for providing the address (A0-A25) to access memory locations.
3. Control Signals:
- CE# (Chip Enable): Activates the device.
- WE# (Write Enable): Initiates write operations.
- RE# (Read Enable): Initiates read operations.
- WP# (Write Protect): Protects against unintentional writes.
4. Ready/Busy Indicator: Pin to indicate the status of the device.
5. Ground and Power Supply Pins: For proper device operation.
This device is designed for applications requiring high-density storage with reliable performance.

Manufacturer

The MT29F2G08ABAEAWP-ITX:E is manufactured by Micron Technology, Inc. Micron is an American producer of semiconductor devices, primarily known for its memory and storage solutions, including DRAM, NAND flash memory, and SSDs. Founded in 1978 and headquartered in Boise, Idaho, Micron operates in the technology sector, focusing on memory and storage technologies that serve a wide array of markets, including consumer electronics, enterprise storage, and mobile devices. The company is a key player in the global semiconductor industry and is recognized for its innovation in memory technology, contributing significantly to advancements in computing, data storage, and embedded systems. Micron serves various segments, including automotive, industrial, and personal computing, making it a versatile entity in the tech landscape.

Application

The MT29F2G08ABAEAWP-ITX:E is a NAND flash memory device used in various application areas, including mobile phones, tablets, and portable devices for data storage. It serves in consumer electronics, automotive applications, industrial automation, and embedded systems. Its high-density storage and fast data access make it suitable for applications requiring substantial memory, such as firmware storage, multimedia content, and operating systems in devices. Additionally, it is utilized in IoT devices for data logging and firmware updates, supporting both consumer and enterprise-level solutions.

Package

The MT29F2G08ABAEAWP-ITX:E is packaged in a 48-ball LFBGA (Low-Profile Fine-Pitch Ball Grid Array) format. This type of packaging provides a compact design with lower profile and improved thermal performance, making it suitable for various applications in mobile and embedded systems.

Frequently Asked Questions


Q: What is the memory organization of the MT29F2G08ABAEAWP-ITX:E?
A: It is organized as 256M x 8 bits, providing a total memory size of 2Gbit, suitable for high-density parallel NAND applications.


Q: What is the operating voltage range for this NAND Flash?
A: It operates within a 2.7V to 3.6V supply range, ensuring compatibility with standard 3.3V logic systems.


Q: Is this component suitable for industrial temperature environments?
A: Yes, it supports an industrial temperature range of -40°C to 85°C, making it reliable for harsh operating conditions.


Q: What is the memory interface type and package form?
A: It uses a parallel memory interface and is housed in a 48-TFSOP (18.40mm Width) package, specifically a 48-TSOP I.


Q: What is the memory technology of this part?
A: It utilizes FLASH - NAND technology, offering non-volatile storage for code and data in embedded systems.


Q: How is the component mounted and what is its lifecycle status?
A: It is designed for surface mount (SMD) assembly. Note: The part status is marked as Obsolete, so it may not be recommended for new designs.


Q: Is the MT29F2G08ABAEAWP-ITX:E programmable via DigiKey?
A: No, according to specifications, it is not verified as DigiKey Programmable, confirming it requires standard NAND programming methods.


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