MT29F4G08ABBDAHC-IT:D

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MT29F4G08ABBDAHC-IT:D

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IC FLASH 4GBIT PARALLEL 63VFBGA

  • HerstellerMicron Technology Inc.

  • Herstellerteil #MT29F4G08ABBDAHC-IT:D

  • Auf Lager3469

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Spezifikationen

Attribut Wert
Part Status Last Time Buy
Base Product Number MT29F4G08
Digi Key Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND
Memory Size 4Gbit
Memory Organization 512M x 8
Memory Interface Parallel
Voltage - Supply 1.7V ~ 1.95V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 63-VFBGA
Supplier Device Package 63-VFBGA (10.5x13)
Packaging Tray

Übersicht

Description

The MT29F4G08ABBDAHC-IT:D is a NAND flash memory chip produced by Micron Technology. It is part of the MT29 family, which is known for its high-capacity and reliable data storage solutions. This specific model offers 4 gigabits of storage capacity, designed for use in a wide range of electronic devices such as smartphones, tablets, and embedded systems.
The chip features a single-level cell (SLC) architecture, which provides higher endurance and reliability compared to multi-level cell (MLC) or triple-level cell (TLC) memory. SLC NAND flash is often used in applications requiring frequent data writes and reads due to its robust performance and longer lifespan.
The MT29F4G08ABBDAHC-IT:D operates at a temperature range of -40°C to +85°C, making it suitable for industrial applications. It utilizes a parallel interface with an 8-bit bus width and supports standard NAND flash commands. The chip is packaged in a TSOP (Thin Small Outline Package) type, which facilitates easy integration into existing circuit designs. Overall, this NAND flash memory chip offers a balance of performance, reliability, and durability for various data storage needs.

Equivalent

The MT29F4G08ABBDAHC-IT:D is a 4Gb NAND Flash memory chip by Micron. Equivalent products from other manufacturers include the K9F4G08U0D from Samsung, the TH58NVG2S3HTA20 from Toshiba (now Kioxia), and the H27UBG8T2ATR from SK Hynix. These chips generally offer similar specifications in terms of capacity, interface, and voltage requirements, but it's important to verify compatibility in terms of specific application requirements and performance characteristics.

Features

The MT29F4G08ABBDAHC-IT:D is a NAND Flash memory device manufactured by Micron Technology. It features a density of 4Gb (gigabits) and uses SLC (Single-Level Cell) technology, which provides enhanced performance and reliability compared to MLC (Multi-Level Cell) counterparts. This device operates with a voltage range of 2.7V to 3.6V, making it suitable for various power supply configurations.
The memory is organized in a x8 I/O configuration, which facilitates efficient data transfer. It supports a wide operating temperature range of -40°C to +85°C, making it suitable for industrial applications. The device is compliant with the ONFI 1.0 (Open NAND Flash Interface) standard, ensuring interoperability with a variety of NAND controllers.
Additional features include a built-in ECC (Error Correction Code) support to enhance data integrity, and wear-leveling algorithms to prolong the device's lifespan. The MT29F4G08ABBDAHC-IT:D is typically used in applications such as embedded systems, automotive, and consumer electronics where reliable data storage is crucial.

Pinout

The MT29F4G08ABBDAHC-IT:D is a NAND Flash memory chip from Micron. It features an 8-bit interface and typically comes in a 48-pin TSOP (Thin Small Outline Package). The pin count is thus 48.
The key functions and pin assignments include:
- I/O Pins (I/O0-I/O7): Data input/output.
- CLE (Command Latch Enable): Activates command register.
- ALE (Address Latch Enable): Activates address register.
- CE# (Chip Enable): Activates the memory device.
- WE# (Write Enable): Allows writing to the memory.
- RE# (Read Enable): Allows reading from the memory.
- WP# (Write Protect): Protects against inadvertent writes.
- R/B# (Ready/Busy): Indicates the status of the chip.
- VCC: Power supply.
- VSS: Ground.
These functions provide essential operations for interfacing with the NAND Flash, including data reading, writing, and management. The specific configuration and use will depend on the application and system design.

Manufacturer

The MT29F4G08ABBDAHC-IT:D is a NAND flash memory chip manufactured by Micron Technology, Inc. Micron is a leading global company in the semiconductor industry, specializing in the production of innovative memory and storage solutions. The company is headquartered in Boise, Idaho, USA, and it is known for developing various types of memory technologies, including DRAM, NAND flash, and 3D XPoint memory. Micron's products are widely used in numerous applications, ranging from consumer electronics and personal computing to data centers and automotive systems. As a company, Micron focuses on advancing semiconductor technology to meet the growing demand for data storage and processing solutions in a rapidly evolving digital landscape.

Application

The MT29F4G08ABBDAHC-IT:D is a NAND Flash memory chip commonly used in various applications that require reliable storage solutions. Key application areas include:
1. Consumer Electronics: Such as smartphones, tablets, and digital cameras, where it provides storage for operating systems, applications, and user data.
2. Industrial Equipment: Used in devices that require robust data storage under various environmental conditions, like automation systems and data loggers.
3. Automotive Systems: Employed in infotainment systems, navigation systems, and other in-car electronic systems that require non-volatile storage.
4. Networking Devices: Utilized in routers and switches for firmware storage and configuration data.
5. Embedded Systems: Provides storage for embedded applications across various industries.

Package

The MT29F4G08ABBDAHC-IT:D is a NAND Flash memory chip from Micron, featuring a 48-pin TSOP Type 1 package. It is designed for industrial temperature applications and offers a capacity of 4 GB with an 8-bit I/O interface.

Frequently Asked Questions


Q: What is the memory density and organization of this NAND Flash?
A: This device has a 4Gbit density organized as 512M x 8 bits, suitable for high-density storage applications.


Q: What is the operating voltage range for this component?
A: It operates from 1.7V to 1.95V, ideal for low-power and portable electronic designs.


Q: Is this component suitable for industrial temperature ranges?
A: Yes, it supports -40°C to 85°C ambient temperature, making it reliable for harsh environments.


Q: What type of memory interface does this part use?
A: It uses a Parallel memory interface, standard for legacy NAND Flash controller designs.


Q: Which package is this NAND Flash available in?
A: It is supplied in a 63-VFBGA (10.5x13) surface mount package, ideal for compact PCB layouts.


Q: Is this component still in active production or end-of-life?
A: Its part status is "Last Time Buy", indicating final purchasing opportunity before discontinuation.


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