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MT29F64G08CBAAAWP:A
+StücklisteIC FLASH 64GBIT PAR 48TSOP I
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HerstellerMicron Technology Inc.
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Herstellerteil #MT29F64G08CBAAAWP:A
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Auf Lager7889
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Part Status | Obsolete |
| Base Product Number | MT29F64G08 |
| Digi Key Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 64Gbit |
| Memory Organization | 8G x 8 |
| Memory Interface | Parallel |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP I |
| Packaging | Box |
Übersicht
Description
Key specifications include a page size of 8 KB and a block size of 128 KB. The device supports simultaneous read and write operations, enhancing efficiency in data management. Additionally, it includes advanced error correction capabilities to ensure data integrity and reliability.
This memory component is part of Micron's family of NAND products, designed to meet the increasing demand for faster and more efficient storage solutions in modern electronic systems. It is housed in a compact package, facilitating easy integration into various designs.
Equivalent
1. Samsung K9F4G08U0A - 64Gb NAND
2. Toshiba TH58NVG7D2LL - 64Gb NAND
3. Intel 29F64G08 - 64Gb NAND
4. Micron MT29F64G08 - Similar family products.
Ensure compatibility by checking specific features like voltage, package type, and memory organization.
Features
1. Capacity: 64 Gb (8 GB) storage.
2. Interface: ONFI 2.3 compliant, supporting high-speed data transfer.
3. Architecture: 2-bit per cell (MLC) NAND, enabling higher density.
4. Voltage: Operates typically at 2.7V to 3.6V, suitable for various applications.
5. Page Size: 8KB page size with a 528-byte/512-byte for data.
6. Block Size: 128KB blocks with 64 pages per block.
7. Endurance: Up to 3,000 program/erase cycles, ensuring durability.
8. Read Speed: Fast read access time, enhancing performance in applications.
9. Form Factor: Available in a compact package, ideal for mobile and embedded systems.
10. Applications: Used in consumer electronics, automotive, and industrial applications.
This chip balances performance, density, and endurance, making it suitable for a wide range of storage solutions.
Pinout
Pin Count: The device typically has 48 pins.
Functions: The key functions of the pins include:
- Data Input/Output (D0-D7): 8-bit data bus for transferring data.
- Chip Enable (CE): Activates the memory chip.
- Write Enable (WE): Controls the write operations.
- Read Enable (RE): Controls the read operations.
- Address Inputs (A0-A21): Used for addressing the memory locations.
- Ready/Busy (R/B): Indicates the status of the memory operation.
- Reset (RESET): Resets the device.
- VCC/VSS: Power supply and ground connections.
This device is commonly used in consumer electronics, mobile devices, and embedded systems.
Manufacturer
The company primarily serves a variety of markets, including computing, mobile devices, automotive, and data centers, providing essential components for consumer electronics, servers, and high-performance computing environments. Micron is known for its innovation in memory technologies, contributing significantly to advancements in storage solutions and enabling the growth of data-intensive applications. With a focus on research and development, Micron remains competitive in the rapidly evolving semiconductor industry.