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MT29F64G08CBABBWPR:B
+StücklisteIC FLASH 64GBIT PAR 48TSOP I
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HerstellerMicron Technology Inc.
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Herstellerteil #MT29F64G08CBABBWPR:B
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Auf Lager8728
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Part Status | Obsolete |
| DigiKey Programmable | Not Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 64Gbit |
| Memory Organization | 8G x 8 |
| Memory Interface | Parallel |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP I |
| Base Product Number | MT29F64G08 |
Übersicht
Description
The MT29F64G08CBABBWPR:B is a NAND flash memory chip manufactured by Micron Technology. This 64Gb (Gigabit) device is designed for high-density storage applications, commonly used in smartphones, tablets, and other portable electronics. It operates with a NAND interface, providing fast data transfer rates and reliable performance for read and write operations.
Key features include a 3D NAND architecture, which enhances storage capacity and endurance while reducing power consumption. The chip supports a range of advanced features, such as wear leveling and bad block management, which contribute to its longevity and reliability.
The "B" designation typically indicates specific characteristics related to the device's configuration, such as temperature range or packaging type. This chip is suitable for applications requiring a combination of high performance, efficiency, and durability, meeting the demands of modern electronic devices. Overall, the MT29F64G08CBABBWPR:B is a robust solution for embedded and consumer electronics needing reliable flash memory storage.
Key features include a 3D NAND architecture, which enhances storage capacity and endurance while reducing power consumption. The chip supports a range of advanced features, such as wear leveling and bad block management, which contribute to its longevity and reliability.
The "B" designation typically indicates specific characteristics related to the device's configuration, such as temperature range or packaging type. This chip is suitable for applications requiring a combination of high performance, efficiency, and durability, meeting the demands of modern electronic devices. Overall, the MT29F64G08CBABBWPR:B is a robust solution for embedded and consumer electronics needing reliable flash memory storage.
Equivalent
The MT29F64G08CBABBWPR:B chip is a 64Gb NAND flash memory chip. Equivalent products can include other 64Gb NAND chips from manufacturers like Samsung (K9GAG08U0E), Micron (MT29F64G08CBAB), and Toshiba (TC58NVG0S3HBAI4). Be sure to check specifications like package type, interface, and voltage compatibility when looking for exact equivalents.
Features
The MT29F64G08CBABBWPR:B is a NAND Flash memory device from Micron Technology, offering the following features:
- Capacity: 64 Gb (Gigabits), providing substantial storage for applications.
- Interface: Supports ONFI 1.0/1.1 and Toggle DDR 2.0 interfaces for high-speed data transfer.
- Page Size: 8 KB page size, facilitating efficient data management and organization.
- Block Size: 128 KB or 256 KB block sizes, allowing for effective wear leveling and management.
- Read/Write Endurance: Typically supports up to 3000 program/erase cycles, ensuring durability for intensive applications.
- Data Retention: Maintains data integrity for up to 10 years at 25°C.
- Power Consumption: Low power features for read and write operations, enhancing energy efficiency.
- Temperature Range: Operates effectively in commercial temperature ranges (-40°C to +85°C).
- Package Type: Available in a 63-ball FBGA package, facilitating compact designs.
This device is suitable for various applications, including consumer electronics, automotive, and industrial uses.
- Capacity: 64 Gb (Gigabits), providing substantial storage for applications.
- Interface: Supports ONFI 1.0/1.1 and Toggle DDR 2.0 interfaces for high-speed data transfer.
- Page Size: 8 KB page size, facilitating efficient data management and organization.
- Block Size: 128 KB or 256 KB block sizes, allowing for effective wear leveling and management.
- Read/Write Endurance: Typically supports up to 3000 program/erase cycles, ensuring durability for intensive applications.
- Data Retention: Maintains data integrity for up to 10 years at 25°C.
- Power Consumption: Low power features for read and write operations, enhancing energy efficiency.
- Temperature Range: Operates effectively in commercial temperature ranges (-40°C to +85°C).
- Package Type: Available in a 63-ball FBGA package, facilitating compact designs.
This device is suitable for various applications, including consumer electronics, automotive, and industrial uses.
Pinout
The MT29F64G08CBABBWPR:B is a NAND Flash memory device manufactured by Micron Technology. It features a total of 48 pins.
### Key Pin Functions:
1. Power Supply Pins:
- VCC: Main power supply.
- VSS: Ground.
2. Control Pins:
- CE#: Chip Enable (active low).
- RE#: Read Enable (active low).
- WE#: Write Enable (active low).
- ALE: Address Latch Enable.
- CLE: Command Latch Enable.
3. Data Pins:
- DQ0-DQ7: Bi-directional data bus (8 bits).
4. Status Pins:
- R/B#: Ready/Busy (indicates the operation status).
5. Additional Pins:
- WP#: Write Protect (active low).
- C/E: Chip Enable for multi-chip configurations.
This device is commonly used in various applications requiring high-density storage, such as smartphones, tablets, and embedded systems. The specific features and performance are aligned with NAND Flash memory standards.
### Key Pin Functions:
1. Power Supply Pins:
- VCC: Main power supply.
- VSS: Ground.
2. Control Pins:
- CE#: Chip Enable (active low).
- RE#: Read Enable (active low).
- WE#: Write Enable (active low).
- ALE: Address Latch Enable.
- CLE: Command Latch Enable.
3. Data Pins:
- DQ0-DQ7: Bi-directional data bus (8 bits).
4. Status Pins:
- R/B#: Ready/Busy (indicates the operation status).
5. Additional Pins:
- WP#: Write Protect (active low).
- C/E: Chip Enable for multi-chip configurations.
This device is commonly used in various applications requiring high-density storage, such as smartphones, tablets, and embedded systems. The specific features and performance are aligned with NAND Flash memory standards.
Manufacturer
The manufacturer of the MT29F64G08CBABBWPR:B is Micron Technology, Inc. Micron is an American company based in Boise, Idaho, specializing in the production of semiconductors, particularly memory and storage solutions. Founded in 1978, Micron is one of the leading manufacturers of DRAM (Dynamic Random-Access Memory), NAND flash memory, and other related products. The company serves a broad range of markets, including computing, mobile, networking, automotive, and industrial sectors. Micron is known for its innovation in memory technologies and plays a crucial role in the global supply chain for electronic components.
Application
The MT29F64G08CBABBWPR:B is a NAND Flash memory chip primarily used in applications such as consumer electronics, automotive systems, industrial equipment, and mobile devices. It is suitable for data storage in smartphones, tablets, digital cameras, and SSDs, providing high-capacity storage with fast read/write speeds. Additionally, it is used in embedded systems for firmware storage and in IoT devices for data logging and storage. Its reliability and endurance make it ideal for applications requiring frequent data access and storage.
Package
The MT29F64G08CBABBWPR:B is a NAND flash memory chip packaged in a BGA (Ball Grid Array) format. This type of package allows for efficient thermal management and high-density mounting on circuit boards.
