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MT40A2G8VA-062E:B
+StücklisteIC DRAM 16GBIT PARALLEL 78FBGA
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HerstellerMicron Technology Inc.
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Herstellerteil #MT40A2G8VA-062E:B
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Auf Lager6373
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
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Spezifikationen
| Attribut | Wert |
| Part Status | Obsolete |
| Base Product Number | MT40A2G8 |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR4 |
| Memory Size | 16Gbit |
| Memory Organization | 4G x 4 |
| Memory Interface | Parallel |
| Clock Frequency | 1.6 GHz |
| Write Cycle Time - Word, Page | 15ns |
| Voltage - Supply | 1.14V ~ 1.26V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package | 78-TFBGA |
| Supplier Device Package | 78-FBGA (10x11) |
| Packaging | Tray |
| Access Time | 19 ns |
Übersicht
Description
Operating at a data transfer rate of 2400 MT/s (megatransfers per second), it is designed for high-performance applications. The "062E" in its designation refers to its timing characteristics and voltage requirements, ensuring compatibility with various systems and platforms. Its FBGA (Fine-Pitch Ball Grid Array) package aids in optimizing thermal performance and minimizing physical footprint, making it suitable for compact devices. Additionally, the chip supports advanced features like on-chip ECC (Error Correction Code), which enhances data integrity and reliability.
Overall, the MT40A2G8VA-062E:B is an efficient, reliable choice for systems requiring robust memory solutions.
Equivalent
1. Samsung: K4A8G085WB-BCRC
2. SK Hynix: H5AN8G8NAFR-UHC
3. Kingston: D4616AG8ABGJD
4. Nanya: NT5CC512M8EN-EK
These chips are generally similar in terms of capacity, speed, and functionality, but specific compatibility should be verified based on the application requirements.
Features
1. Memory Type: DDR4 SDRAM, delivering faster data transfer rates and improved bandwidth compared to previous generations.
2. Capacity: Typically configured in gigabits (Gb), this model provides 16Gb density, allowing for substantial data storage and quick access.
3. Speed: Operates at high clock speeds, with data rates of up to 3200 MT/s, facilitating rapid data processing and system responsiveness.
4. Voltage: Optimized for low power consumption with a standard operating voltage of 1.2V, enhancing energy efficiency.
5. Form Factor: Available in various configurations, including RDIMM, UDIMM, and SODIMM, suitable for diverse platforms and compatibility needs.
6. Reliability: Incorporates error-correcting code (ECC) for enhanced data integrity and reliability in mission-critical applications.
7. Compatibility: Aligns with JEDEC standards, ensuring broad compatibility across different systems and devices.
These features make the MT40A2G8VA-062E:B suitable for enterprise servers, data centers, and high-performance computing environments.
Pinout
In terms of pin count, the MT40A2G8VA-062E:B has 78 balls (pins), which include a combination of data, address, control, power, and ground pins. The key functions of these pins include:
1. Data Pins (DQ): Used for input/output of data.
2. Address Pins (A): Used to select memory addresses.
3. Control Pins (such as CS#, RAS#, CAS#, WE#): Used for controlling operations like chip select, row access, column access, and write enable.
4. Clock Pins (CK, CK#): Used for synchronizing data transactions.
5. Power and Ground Pins (VDD, VSS): Supply power and ground connections to the IC.
6. Other pins (such as ODT, CKE, DM, DQS, DQS#): Used for on-die termination, clock enable, data masking, and data strobe functions.
This configuration is typical for a DDR4 SDRAM module, providing high-speed data transfer and efficient memory management.
Manufacturer
Application
1. Computing Devices: Used in desktops, laptops, and servers for efficient data processing and storage.
2. Networking Equipment: Supports routers, switches, and other network infrastructure devices requiring high-speed data handling.
3. Data Centers: Provides memory for servers and storage systems, enhancing performance and scalability.
4. Embedded Systems: Incorporated into embedded applications in automotive, industrial, and IoT devices for reliable memory support.
5. Consumer Electronics: Utilized in TVs, gaming consoles, and other electronic devices requiring high-speed memory access.
These applications benefit from the chip's high bandwidth, low latency, and energy efficiency features.
Package
Frequently Asked Questions
Q: What is the memory density and organization of the MT40A2G8VA-062E:B?
A: It has a 16Gbit density organized as 4G x 4 bits, suitable for high-capacity DDR4 applications.
Q: What is the maximum clock frequency supported?
A: It supports a clock frequency of 1.6 GHz, enabling high-speed data transfer for DDR4 SDRAM interfaces.
Q: What is the operating voltage range for this DRAM?
A: The voltage supply range is 1.14V to 1.26V, compliant with DDR4 standard VDD requirements.
Q: What is the access time and write cycle time?
A: Access time is 19 ns; write cycle time for word/page is 15 ns, ensuring fast read/write performance.
Q: What is the memory interface and package type?
A: It uses a parallel memory interface and comes in a 78-TFBGA package with a 78-FBGA (10x11mm) supplier device package.
Q: Is this component surface mount and what is its operating temperature?
A: Yes, it is surface mount (SMD), with an operating temperature range of 0°C to 95°C (TC).
Q: What packaging format is used for delivery?
A: It is shipped in Tray packaging, suitable for automated assembly lines.