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MT41J128M16HA-125:D
+StücklisteIC DRAM 2GBIT PARALLEL 96FBGA
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HerstellerMicron Technology Inc.
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Herstellerteil #MT41J128M16HA-125:D
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Paket TFBGA-96
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Auf Lager5019
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tray |
| Part Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3 |
| Memory Size | 2Gb (128M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 800 MHz |
| Access Time | 13.75 ns |
| Voltage - Supply | 1.425V ~ 1.575V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
Übersicht
Description
This memory chip is commonly used in high-performance computing applications, offering a balance of speed, energy efficiency, and cost-effectiveness. It's suitable for various applications, including personal computers, servers, and networking equipment. The chip operates with a voltage of 1.5V, following the JEDEC standard for DDR3, making it compatible with a range of systems that support DDR3 memory.
Overall, the MT41J128M16HA-125:D provides reliable and efficient performance for data-intensive tasks.
Equivalent
1. Hynix H5TQ2G63GFR series
2. Samsung K4B2G1646E series
3. Nanya NT5CB256M16DP series
4. Kingston D2516EC4BXGGB series
These alternatives offer similar DDR3 specifications and capacities, but it is important to verify compatibility with your specific application requirements.
Features
1. Capacity and Configuration: It provides a storage capacity of 2GB, organized as 128 Meg x 16.
2. Speed and Performance: The device operates at a high-speed data rate of up to 1600 MT/s (megatransfers per second).
3. Supply Voltage: It functions at a standard voltage of 1.5V, with a backward-compatible option of 1.35V operation for better power efficiency.
4. Package Type: Offered in a compact 96-ball FBGA (Fine-Pitch Ball Grid Array) package.
5. Temperature Range: Designed to operate effectively over a standard commercial temperature range.
6. Self-Refresh Options: Includes a self-refresh mode for power savings during inactive periods.
7. Error Correction: Supports Read and Write leveling to ensure signal integrity and reliable data transfer.
8. Compatibility: Compatible with a wide range of processors and systems requiring DDR3 memory.
These features make the MT41J128M16HA-125:D suitable for applications in computing, networking, and consumer electronics.
Pinout
The primary functions of the pins/balls include:
1. Address Pins (A0-A13, BA0-BA2): Used for the address lines to select the memory location.
2. Data Pins (DQ0-DQ15): Serve as the data input/output for the memory.
3. Control Pins (RAS#, CAS#, WE#): Used to control various operations like row and column addressing.
4. Clock Pins (CK, CK#): Used to synchronize the operations of the memory.
5. Strobe Pins (DQS, DQS#): Used for data input/output timing.
6. Power and Ground Pins (VDD, VSS, VDDQ, VSSQ): Provide power and ground connections.
7. Command/Other Pins (CS#, ODT, CKE): Used for chip select, on-die termination, and clock enable functions.
This concise summary covers the pin count and their basic functions. For detailed information, refer to the datasheet.