MT41K256M16LY-107:N

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MT41K256M16LY-107:N

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IC DRAM 4GBIT PAR 96FBGA

  • HerstellerMicron Technology Inc.

  • Herstellerteil #MT41K256M16LY-107:N

  • Auf Lager7467

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Attribut Wert
Part Status Obsolete
Base Product Number MT41K256M16
Digi Key Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR3L
Memory Size 4Gbit
Memory Organization 256M x 16
Memory Interface Parallel
Clock Frequency 933 MHz
Voltage - Supply 1.283V ~ 1.45V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package / Case 96-TFBGA
Supplier Device Package 96-FBGA (7.5x13.5)
Packaging Tray
Access Time 20 ns

Übersicht

Description

The MT41K256M16LY-107:N is a DRAM component, specifically a DDR3L (Double Data Rate 3 Low Voltage) SDRAM. It offers 4 Gb (gigabits) of storage capacity, organized as 256M x 16 bits. This memory chip is designed to provide high-speed data transfer capabilities, making it suitable for applications that require efficient and reliable memory solutions, such as in computing and networking environments.
Key features include a low voltage operation of 1.35V, which helps in reducing power consumption compared to standard DDR3 SDRAMs operating at 1.5V. The "-107" in its designation indicates a maximum clock rate of 933 MHz with a data transfer rate of 1866 MT/s (million transfers per second). This makes it ideal for systems that demand high bandwidth.
The chip also supports various power-saving features like deep power-down, allowing it to be used effectively in energy-conscious applications. Additionally, its compact form factor and robust architecture ensure compatibility with a range of devices and systems.

Equivalent

The MT41K256M16LY-107:N chip is a 4Gb DDR3L SDRAM from Micron. Equivalent products include:
1. Hynix H5TC4G63AFR-PBA
2. Samsung K4B4G1646D-BCK0
3. Nanya NT5CB256M16DP-CG
4. Kingston D2516EC4BXGGB
These alternatives offer similar memory capacities, voltage, and performance specifications, making them suitable replacements in compatible systems. Always verify compatibility with your specific application requirements and system architecture.

Features

The MT41K256M16LY-107:N is a DRAM component from Micron Technology, featuring the following characteristics:
1. Type: 4Gb DDR3L SDRAM.
2. Density: 4 Gigabits.
3. Configuration: 256 Meg x 16.
4. Voltage: Operates at a low voltage of 1.35V (with backward compatibility to 1.5V).
5. Speed: Data rate of up to 1866 MT/s.
6. Package: Available in a 96-ball FBGA package.
7. Temperature Range: Standard and industrial temperature ranges.
8. Features: Includes on-die termination (ODT), auto-refresh, and self-refresh capabilities.
9. Performance: Designed for high-performance, low-power applications.
10. Reliability: Supports error checking and correction (ECC) to improve data integrity.
These features make the MT41K256M16LY-107:N suitable for a variety of applications, including computing, networking, and consumer electronics, where efficient power consumption and high data throughput are crucial.

Pinout

The MT41K256M16LY-107:N is a 4Gb (Gigabit) DDR3L SDRAM memory device, part of the Micron DDR3 SDRAM family. It is organized as 256M x 16 bits. The device is housed in a 96-ball FBGA (Fine-pitch Ball Grid Array) package.
The primary functions of this memory include high-speed data storage and retrieval for various applications such as laptops, desktops, and servers. It operates at a 1.35 V power supply and supports data rates up to 1,333 MT/s (Megatransfers per second), making it suitable for high-performance computing environments. The memory supports features such as auto precharge, self-refresh mode, and programmable burst lengths.
For more detailed information, including the complete pin configuration and in-depth functional description, refer to the device's datasheet provided by Micron.

Manufacturer

The MT41K256M16LY-107:N is manufactured by Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in the production of memory and storage solutions. The company designs and manufactures a wide range of memory technologies, including DRAM, NAND flash, and NOR flash, which are used in various electronic devices and systems. Micron’s products are integral to numerous applications in sectors such as computing, mobile, automotive, industrial, and consumer electronics. The company is known for its innovation in memory solutions and plays a critical role in advancing the capabilities of modern technology.

Application

The MT41K256M16LY-107:N is a DRAM module, specifically a 4Gb DDR3L SDRAM, which is commonly used in various applications that require efficient memory solutions. Key application areas include personal computers, laptops, and servers, where they enhance system performance by providing fast data access and storage. Additionally, they are used in networking equipment, such as routers and switches, to handle large data throughput. Consumer electronics, such as gaming consoles and smart TVs, leverage these DRAM modules for improved graphics and responsiveness. They are also used in industrial automation systems and embedded systems, where reliable and speedy memory access is crucial for real-time data processing.

Package

The MT41K256M16LY-107:N is a DRAM component packaged in a 96-ball FBGA (Fine-pitch Ball Grid Array) type.

Frequently Asked Questions


Q: What is the memory density and organization of the MT41K256M16LY-107:N?
A: It has a 4Gbit density organized as 256M x 16, ideal for high-bandwidth applications requiring 16-bit data bus width.


Q: What voltage range does this DDR3L SDRAM support?
A: It operates from 1.283V to 1.45V, compliant with DDR3L low-voltage standards for reduced power consumption.


Q: What is the maximum clock frequency and access time?
A: The clock frequency is 933 MHz, with a random access time of 20 ns, supporting high-speed data transfers.


Q: Is this component suitable for surface-mount assembly?
A: Yes, it is designed for surface mounting in a 96-TFBGA package with a supplier device package of 96-FBGA (7.5x13.5).


Q: What is the operating temperature range for this DRAM?
A: It operates within 0°C to 95°C (TC), making it suitable for commercial and industrial environments with thermal management.


Q: Can this memory be used in battery-powered devices?
A: Yes, as a DDR3L device with a low voltage supply (1.283V-1.45V), it is optimized for power-sensitive applications.


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