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MT41K256M16TW-107:P
+StücklisteIC DRAM 4GBIT PAR 96FBGA
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HerstellerMicron Technology Inc.
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Herstellerteil #MT41K256M16TW-107:P
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Auf Lager1470
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Part Status | Active |
| Base Product Number | MT41K256M16 |
| Digi Key Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3L |
| Memory Size | 4Gbit |
| Memory Organization | 256M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 933 MHz |
| Voltage - Supply | 1.283V ~ 1.45V |
| Operating Temperature | 0°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 96-TFBGA |
| Supplier Device Package | 96-FBGA (8x14) |
| Packaging | Tray |
| Access Time | 20 ns |
Übersicht
Description
The "-107:P" in its designation indicates a specific speed grade and package type, with the "107" suggesting a clock speed where data transfer rates can reach up to 1866 MT/s. The device is suitable for a range of applications, including personal computing, networking, and servers, offering high reliability and performance.
Key features include an 8n-prefetch architecture, programmable read/write burst lengths, on-die termination, and dynamic on-chip thermal sensor. Its reduced voltage supply conserves power without compromising performance, making it ideal for energy-efficient applications. Additionally, the chip supports advanced error correction and is compliant with JEDEC standards.
Equivalent
1. Samsung K4B4G1646D-BCK0
2. SK Hynix H5TC4G63CFR-PBA
3. Kingston D2516EC4BXGGB
These alternatives should match in key specifications such as density, speed, and voltage. Always verify compatibility with the specific application requirements.
Features
1. Density & Organization: It has a density of 4Gb, organized as 256M x 16 bits.
2. Speed: Operates at a data rate of up to 1866 MT/s (Megatransfers per second).
3. Voltage: Requires a supply voltage of 1.5V, with a low-voltage option (MT41K256M16TW-107:D) at 1.35V.
4. Package: Typically comes in a 96-ball FBGA (Fine-Pitch Ball Grid Array) package.
5. Applications: Ideal for use in a wide range of applications, including personal computing, networking, and consumer electronics.
6. Temperature Ranges: Supports standard and industrial temperature ranges for versatile environmental compatibility.
7. Features: Includes features like on-die termination (ODT), dynamic on-die termination, and asynchronous reset.
This DRAM chip is designed to provide high-performance memory solutions, ensuring efficient data processing and storage capabilities in a compact form factor.
Pinout
This chip is typically housed in a 96-ball FBGA (Fine-Pitch Ball Grid Array) package. The pin count refers to the number of connections available on the chip, and in this case, it has 96 balls or connection points.
The primary function of this DDR3L SDRAM is to provide high-speed data storage and retrieval for applications such as computing devices, networking equipment, and other electronics requiring fast memory. It operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), making it energy efficient.
Overall, the MT41K256M16TW-107:P is designed for use in environments where reduced power consumption and efficient data processing are crucial.
Manufacturer
Founded in 1978, Micron is headquartered in Boise, Idaho, and operates globally. The company plays a key role in advancing memory technology, focusing on high-performance, efficient, and reliable memory products for various applications, including computing, networking, and mobile devices. Micron’s products are used in a wide range of devices, from personal computers and smartphones to servers and automotive systems.
Micron is known for its significant contributions to the memory and storage industry, often working on next-generation technologies and innovations. It competes with other major players like Samsung and SK Hynix in the global semiconductor market.
Application
1. Computing: Used in desktop PCs, laptops, and servers for main memory to enhance performance.
2. Consumer Electronics: Found in gaming consoles, smart TVs, and set-top boxes to support high-speed operations.
3. Networking: Utilized in routers and switches for buffering and data processing.
4. Mobile Devices: Employed in smartphones and tablets to improve multitasking capabilities.
5. Industrial Applications: Used in embedded systems for automation and control tasks requiring robust memory solutions.
Package
Frequently Asked Questions
Q: What is the memory technology and voltage range of this DRAM?
A: It uses DDR3L SDRAM technology, operating at a low voltage of 1.283V to 1.45V, making it suitable for power-sensitive applications.
Q: What is the maximum clock frequency and access time?
A: It supports a clock frequency of 933 MHz with an access time of 20 ns, enabling high-speed data transfer for computing tasks.
Q: Is this component compatible with surface mount assembly?
A: Yes, it features a surface mount package (96-TFBGA) with a supplier device package of 96-FBGA (8x14), ideal for automated SMT processes.
Q: What is the memory organization and total density?
A: It has a 256M x 16 organization with a total density of 4Gbit, providing 512MB of volatile memory storage.
Q: What are the temperature operating limits?
A: The operating temperature range is 0°C to 95°C (TC), ensuring reliable performance in standard commercial and industrial environments.
Q: Does this part support parallel memory interface?
A: Yes, it uses a parallel memory interface, which is standard for DDR3L SDRAM to achieve high bandwidth communication.
