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MT41K512M8RH-125 IT:E
+StücklisteDRAM
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HerstellerMicron
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Herstellerteil #MT41K512M8RH-125 IT:E
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Datenblatt MT41K512M8RH-125 IT:E DataSheet
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Auf Lager6240
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
Übersicht
Description
Key features include a clock speed of 1600 MT/s (million transfers per second), which allows for swift data processing suitable for various applications such as computing and networking equipment. The "IT" in its designation stands for Industrial Temperature range, indicating its operational capability from -40°C to 95°C, making it suitable for harsh environments.
The MT41K512M8RH-125 IT:E unit supports a standard JEDEC-compliant 78-ball FBGA (Fine-pitch Ball Grid Array) package, ensuring compatibility with a range of hardware interfaces. Its low voltage requirement of 1.35V enhances energy efficiency, beneficial for battery-powered devices.
This DRAM is typically used in applications requiring reliable and efficient memory solutions, such as industrial electronics, automotive systems, and communications infrastructure.
Equivalent
1. Samsung K4B4G0846D series
2. Hynix H5TC4G83MFR series
3. Nanya NT5CB512M8DN series
These equivalents should have compatible specifications such as density, speed, and voltage. Always verify datasheets for compatibility.
Features
1. Density and Organization: It has a density of 4Gb (512M x 8), making it suitable for high-capacity memory solutions.
2. Speed and Performance: The chip operates at a clock rate of up to 1600 MT/s (megatransfers per second), allowing for efficient data handling in high-performance systems.
3. Low Voltage Operation: It runs at a voltage of 1.35V, which helps in reducing power consumption and is ideal for energy-sensitive applications.
4. Operating Temperature: The IT:E designation indicates it is suitable for industrial temperature applications, with a temperature range from -40°C to +95°C.
5. Package Type: It comes in a 78-ball FBGA (Fine-pitch Ball Grid Array) package, providing a compact form factor for integration into various electronic devices.
These features make the MT41K512M8RH-125 IT:E ideal for use in industrial applications requiring reliable performance in extreme conditions.
Pinout
Key functions of the MT41K512M8RH-125 IT:E include:
- High-density storage: It offers a capacity of 4 Gb, organized as 512 Meg x 8.
- Low voltage operation: The DDR3L technology allows it to operate at a lower voltage (1.35V), reducing power consumption compared to standard DDR3 memory.
- High-speed performance: It features a data rate of up to 1600 MT/s (million transfers per second), providing fast memory access for applications.
This memory chip is suitable for use in various applications, including laptops, desktops, servers, and embedded systems, where efficient power usage and high performance are critical.
Manufacturer
Application
1. Consumer Electronics: Utilized in devices such as TVs and gaming consoles for efficient memory management.
2. Computing: Employed in desktops, laptops, and servers to enhance multitasking and performance.
3. Networking: Used in routers and switches for quick data routing and processing.
4. Industrial Systems: Suitable for embedded systems in automation and control applications.
5. Telecommunications: Supports base stations and other equipment requiring fast data transmission.
6. Automotive: Applied in advanced driver-assistance systems (ADAS) and infotainment systems for real-time data handling.