MT46H64M16LFBF-5 AIT:B

The MT46H64M16LFBF-5 AIT:B is a mobile low-power DDR (LPDDR) DRAM chip designed by Micron Technology. It operates with a memory density of 1 gigabit, organized as 64M x 16 bits, and is suitable for portable and mobile applications where power efficiency and compactness are critical. This particular DRAM chip belongs to the LPDDR SDRAM family, known for providing reduced power consumption and improved performance in mobile devices such as smartphones, tablets, and other embedded applications.
The "AIT:B" designation often refers to a specific revision or configuration within the product series, indicating slight variations in specifications or features, although the specific meaning can vary based on the manufacturer's notation.
With a data rate of DDR-200, the MT46H64M16LFBF-5 AIT:B supports a maximum clock frequency of 200 MHz, providing efficient data transfer rates suitable for modern mobile computing needs. This DRAM chip is built to support efficient memory management, low latency, and high-speed data access, making it an ideal solution for modern electronics requiring optimized performance and battery life.

The MT46H64M16LFBF-5 AIT:B is a 1Gb DDR SDRAM memory chip by Micron. Equivalent products could include similar DDR SDRAM chips from other manufacturers like Samsung, Hynix, or Winbond, such as the H5PS1G63JFR series from Hynix or K4T1G164QF series from Samsung, as they offer similar specifications in terms of capacity, speed, and voltage. Always ensure compatibility by checking the complete datasheets and product specifications from the manufacturers.

The MT46H64M16LFBF-5 AIT:B is a DRAM module from Micron Technology, specifically a 1Gb DDR2 SDRAM. Key features include:
1. Density and Organization: It has a density of 1Gb and organized as 64M x 16 bits.
2. Data Rate and Speed: Operates at a data rate of DDR2-400, with a clock speed of 200 MHz and data rate of 400 MT/s.
3. Voltage: Uses a supply voltage of 1.8V, which is typical for DDR2 memory, contributing to lower power consumption compared to DDR and earlier technologies.
4. Packaging: Available in a 84-ball FBGA (Fine-pitch Ball Grid Array) package, suitable for compact designs.
5. Timing: Features a CAS latency of 5, which affects access time.
6. Temperature Range: Designed for standard commercial temperature ranges, ensuring reliability in typical operating environments.
These features make it suitable for applications needing moderate speed and power efficiency, such as computing and consumer electronics.

The MT46H64M16LFBF-5 AIT:B is manufactured by Micron Technology, Inc. Micron is an American company specializing in the production and development of memory and storage solutions. It is one of the largest and most prominent companies in the semiconductor industry, known for its dynamic random-access memory (DRAM), NAND flash memory, and other semiconductor devices. Micron's products are used in a wide range of applications, including personal computing, mobile devices, data centers, automotive electronics, and industrial systems. The company plays a critical role in enabling advanced computing systems and data storage solutions, making it a key player in advancing technology globally.

The MT46H64M16LFBF-5 AIT:B is a low-power Double Data Rate (DDR) Synchronous DRAM, commonly used in various applications. It is suitable for mobile devices, such as smartphones and tablets, due to its efficient power consumption. Additionally, this memory module is used in embedded systems and consumer electronics, including digital cameras, portable media players, and gaming devices, to enhance data processing and storage capabilities. Its high-speed and low-power characteristics make it ideal for networking equipment and automotive applications, where performance and energy efficiency are critical.

The package type for the MT46H64M16LFBF-5 AIT:B is a 60-ball Fine-Pitch Ball Grid Array (FBGA).