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MT46H64M16LFBF-6 IT:B
+StücklisteDRAM
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HerstellerMicron
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Herstellerteil #MT46H64M16LFBF-6 IT:B
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Auf Lager6199
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
Übersicht
Description
Key features include low operating voltage, typically around 1.8V, which helps in reducing power consumption, making it suitable for battery-powered devices. The chip also supports various power-saving modes, such as deep power-down and partial array self-refresh, which further enhance its energy efficiency.
Operating at a clock frequency compatible with a range of mobile applications, the MT46H64M16LFBF-6 IT:B is built to meet industrial temperature ranges, ensuring reliability under different environmental conditions. Its compact form factor and robust performance make it an ideal choice for smartphones, tablets, and other portable electronics where space and power are at a premium.
Equivalent
1. Samsung K4H561638J-LCCC
2. Hynix HY5DU121622FTP-D43
3. Alliance Memory AS4C64M16D2-25BCN
These chips are similarly specified DDR SDRAMs with comparable capacity and speed, often used interchangeably in various electronic applications. Always verify compatibility with the specific system requirements before substituting.
Features
1. Low Power Consumption: Optimized for mobile applications, it supports features like partial array self-refresh (PASR) and temperature-compensated self-refresh (TCSR) to conserve power.
2. High-Speed Data Transfer: Operates at a clock frequency of 166 MHz with a data rate of 333 MT/s (megatransfers per second).
3. Multiple Power-Saving Modes: Includes deep power-down and auto power-down modes, enhancing battery life in portable devices.
4. Random Access Capability: Provides fast random access times, essential for efficient data processing.
5. Temperature Range: Rated for industrial temperature range, making it suitable for a variety of environments.
6. Package Type: Offered in a compact FBGA (Fine-Pitch Ball Grid Array) package, ideal for space-constrained applications.
Overall, this memory module is tailored for devices requiring efficient power usage without sacrificing performance.
Pinout
1. Data Pins (DQ0–DQ15): These 16 pins are used for data input/output.
2. Address Pins (A0–A12): These pins are used to select memory addresses.
3. Bank Address Pins (BA0, BA1): These are used to select one of the four memory banks.
4. Control Pins: Includes RAS# (Row Address Strobe), CAS# (Column Address Strobe), WE# (Write Enable), and CS# (Chip Select) for command and control functions.
5. Clock Pins (CK, CK#): Used for synchronizing data.
6. Power and Ground Pins (VDD, VSS): Provide power and ground.
7. Other Pins: Include pins like CKE (Clock Enable), DM (Data Mask), and ODT (On-Die Termination).
For detailed pin functions, refer to the official datasheet or product documentation.