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MT46V32M16P-5B:J
+StücklisteIC DRAM 512MBIT PARALLEL 66TSOP
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HerstellerMicron Technology Inc.
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Herstellerteil #MT46V32M16P-5B:J
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Auf Lager7209
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Spezifikationen
| Attribut | Wert |
| PartStatus | Last Time Buy |
| BaseProductNumber | MT46V32M16 |
| DigiKeyProgrammable | Not Verified |
| MemoryType | Volatile |
| MemoryFormat | DRAM |
| Technology | SDRAM - DDR |
| MemorySize | 512Mbit |
| MemoryOrganization | 32M x 16 |
| MemoryInterface | Parallel |
| ClockFrequency | 200 MHz |
| WriteCycleTime-Word,Page | 15ns |
| Voltage-Supply | 2.5V ~ 2.7V |
| OperatingTemperature | 0°C ~ 70°C (TA) |
| MountingType | Surface Mount |
| Package | 66-TSSOP (0.400", 10.16mm Width) |
| SupplierDevicePackage | 66-TSOP |
| Packaging | Tray |
| AccessTime | 700 ps |
Übersicht
Description
Equivalent
1. Hynix: HY5DU121622DTP
2. Samsung: K4H561638J-LCB3
3. Nanya: NT5DS32M16BS-5T
These are DDR SDRAMs with similar configurations and performance characteristics. Always verify the exact specifications and compatibility before replacing or substituting memory chips.
Features
1. Memory Configuration: 512 Megabit density, organized as 32M x 16 bits.
2. Speed and Performance: Clock speed of 200 MHz with a data rate of DDR-400, meaning it can transfer data at 400 MT/s (million transfers per second).
3. Latency: CAS latency options include CL2.5, providing a balance between speed and reliability.
4. Voltage: Operates at a voltage of 2.5V, which is standard for DDR SDRAM.
5. Package: Available in a 66-pin TSOP (Thin Small Outline Package), which is compact and suitable for space-saving designs.
6. Temperature Range: Designed to function in standard commercial temperature ranges.
7. Applications: Commonly used in computing applications, including desktops, laptops, and servers, where moderate performance and capacity are needed.
8. JEDEC Standard Compliance: Ensures compatibility and reliability across different platforms and devices.
These features make the MT46V32M16P-5B:J a suitable choice for various memory applications requiring efficient data handling and moderate speed.
Pinout
1. Power and Ground: Includes VDD and VSS pins for core power supply and ground, with VDDQ and VSSQ for the I/O buffer.
2. Address Pins (A0-A12): Used for addressing the memory locations.
3. Bank Address Pins (BA0-BA1): For selecting one of the four banks.
4. Data Pins (DQ0-DQ15): 16 data input/output pins for data transfer.
5. Clock and Control Pins:
- CLK: Clock input.
- CKE: Clock enable.
- CS#: Chip select.
- RAS#, CAS#, WE#: Row address strobe, column address strobe, and write enable.
6. Data Mask (DM0-DM1): For input data masking.
7. DQS: Data strobe for synchronizing data transfers.
These pins collectively facilitate various functions such as read/write operations, address multiplexing, and synchronization.
Manufacturer
Micron serves a wide range of industries, including consumer electronics, data centers, automotive, and industrial applications. It focuses on developing advanced memory technologies to meet the growing demand for efficient and high-capacity data storage and processing solutions. The company is recognized for its innovation and research in memory technology, making it a key player in the semiconductor industry.
Application
1. Computing Systems: Used in desktops, laptops, and servers for efficient data processing.
2. Networking Equipment: Utilized in routers and switches for high-speed data transmission.
3. Consumer Electronics: Found in gaming consoles, digital TVs, and set-top boxes for enhanced performance.
4. Embedded Systems: Employed in industrial automation and automotive electronics for real-time data handling.
5. Telecommunications: Used in equipment that requires rapid data transfer and processing capabilities.
Its reliability and speed make it suitable for diverse high-performance applications.
Package
Frequently Asked Questions
Q: What is the memory density and organization of this DDR SDRAM?
A: It has a 512Mbit density organized as 32M x 16, providing a 16-bit wide data bus for parallel interface.
Q: What is the maximum clock frequency and data rate?
A: The maximum clock frequency is 200 MHz, supporting a DDR data rate of 400 Mbps per pin.
Q: What voltage supply range does this component require?
A: It requires a nominal 2.5V to 2.7V supply, typical for DDR SDRAM applications.
Q: What is the access time and write cycle time?
A: Access time is 700 ps (tAC), and write cycle time for word/page is 15ns.
Q: What package and mounting type are used?
A: It comes in a 66-TSSOP surface-mount package (10.16mm width), supplied as a 66-TSOP.
Q: Is this memory volatile or non-volatile?
A: It is volatile DRAM, requiring constant power and periodic refresh to retain data.
Q: What is the recommended operating temperature range?
A: The commercial temperature range is 0°C to 70°C (TA), suitable for most embedded systems.