MT47H128M16RT-25E:C

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MT47H128M16RT-25E:C

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IC DRAM 2GBIT PARALLEL 84FBGA

  • HerstellerMicron Technology Inc.

  • Herstellerteil #MT47H128M16RT-25E:C

  • Auf Lager1543

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Attribut Wert
Part Status Last Time Buy
Base Product Number MT47H128M16
Digi Key Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR2
Memory Size 2Gbit
Memory Organization 128M x 16
Memory Interface Parallel
Clock Frequency 400 MHz
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.7V ~ 1.9V
Operating Temperature 0°C ~ 85°C (TC)
Mounting Type Surface Mount
Package / Case 84-TFBGA
Supplier Device Package 84-FBGA (9x12.5)
Packaging Tray
Access Time 400 ps

Übersicht

Description

The MT47H128M16RT-25E:C is a DRAM component produced by Micron Technology. Specifically, it is a DDR2 (Double Data Rate 2) SDRAM, engineered for high-speed data storage and retrieval. This memory chip features a capacity of 2Gb (gigabits) and is organized into 128M x 16, indicating its configuration with 128 million words of 16 bits each. The "25E" in its designation refers to its operating speed and timing characteristics, suggesting a clock speed of 400 MHz and a data transfer rate of 800 MT/s (megatransfers per second). The "C" indicates a specific revision or version of the chip.
DDR2 SDRAMs like the MT47H128M16RT-25E:C offer higher bandwidth and improved performance compared to earlier SDRAM generations, while consuming less power. These chips are commonly used in applications such as computers, networking equipment, and servers where efficient data handling is crucial. With its advanced features and robust design, the MT47H128M16RT-25E:C provides reliable performance for various high-demand computing environments.

Equivalent

The MT47H128M16RT-25E:C is a DDR2 SDRAM chip from Micron. Equivalent products would include similar DDR2 SDRAM chips with the same memory density and configuration from other manufacturers, such as the H5PS1G63EFR from SK Hynix, the K4T1G164QH from Samsung, and the EM6AB160TSD from Etron Technology. These chips should match in terms of memory size, speed, and voltage to be considered equivalent. Always confirm compatibility with your specific application requirements.

Features

The MT47H128M16RT-25E:C is a DRAM memory module produced by Micron Technology. Here are its key features:
1. Type: DDR2 SDRAM
2. Density: 2Gb (Gigabits)
3. Configuration: 128M x 16
4. Speed Grade: 25E, supporting a data rate of 800 MT/s (megatransfers per second)
5. Package: 84-ball FBGA
6. Voltage: Operates at 1.8V, which contributes to lower power consumption compared to previous generations.
7. Burst Length: Options of 4 or 8, providing flexibility in data access patterns.
8. Latency: CAS latency options to optimize performance for different applications.
9. Error Correction: Non-ECC, which means it doesn't have built-in error correction capabilities.
10. Temperature Range: Designed to operate within standard temperature ranges for use in consumer electronics.
This memory component is suitable for a variety of applications, including computing and consumer electronics, where high-speed and efficient memory solutions are crucial.

Pinout

The MT47H128M16RT-25E:C is a DDR2 SDRAM memory chip manufactured by Micron Technology. It has a pin count of 84, typically housed in a Fine-Pitch Ball Grid Array (FBGA) package. The primary function of this chip is to provide high-speed, temporary data storage for computing devices, facilitating quicker data access and processing. It features a density of 2Gb, organized as 128M x 16, and operates at clock speeds of up to 800 MHz, delivering double data rate transfers. The chip is commonly used in applications requiring efficient memory performance, such as laptops, desktops, and other consumer electronics.

Manufacturer

The MT47H128M16RT-25E:C is a DRAM chip manufactured by Micron Technology, Inc. Micron is a global leader in the semiconductor industry, specializing in the production of memory and storage solutions. The company designs and produces a wide range of products, including dynamic random-access memory (DRAM), NAND flash memory, and other semiconductor components used in computing, data centers, consumer electronics, automotive, and mobile devices. Micron is known for its innovation in memory technology and plays a critical role in enabling advanced computing applications.

Application

The MT47H128M16RT-25E:C is a DDR2 SDRAM memory chip commonly used in applications that require efficient, high-speed memory performance. Key application areas include:
1. Consumer Electronics: Utilized in devices like TVs, set-top boxes, and gaming consoles for smooth multimedia processing.
2. Computing: Integrated into desktops, laptops, and servers to enhance data processing speed and multitasking capabilities.
3. Networking Equipment: Used in routers, switches, and other networking devices to manage data traffic efficiently.
4. Industrial Systems: Applied in industrial automation systems requiring reliable and fast memory operations.
5. Telecommunications: Used in telecom infrastructure for handling high bandwidth data transmission.
Its low power consumption and high data transfer rates make it suitable for applications demanding performance and efficiency.

Package

The MT47H128M16RT-25E:C is a DRAM chip from Micron Technology. It typically comes in a 84-ball Fine-Pitch Ball Grid Array (FBGA) package.

Frequently Asked Questions


Q: What is the maximum clock frequency supported by this DDR2 SDRAM?
A: It supports a maximum clock frequency of 400 MHz, enabling high-speed data transfer rates for parallel memory interfaces.


Q: What is the memory organization and density of the MT47H128M16RT-25E:C?
A: It is organized as 128M x 16 bits, providing a total memory density of 2 Gbit for volatile DRAM storage.


Q: What is the typical application for this component?
A: It is ideal for embedded systems, networking equipment, and computing applications requiring low-latency, high-bandwidth DDR2 memory.


Q: What is the operating voltage range for this device?
A: The supply voltage range is 1.7V to 1.9V, making it suitable for low-power, surface-mount designs.


Q: What is the access time and write cycle time for this memory?
A: Access time is 400 ps, and the write cycle time for word or page operations is 15 ns, ensuring efficient read/write performance.


Q: What package options are available for this DDR2 SDRAM?
A: It comes in an 84-TFBGA package, with a supplier device package of 84-FBGA (9x12.5 mm), suitable for compact PCB layouts.


Q: What is the operating temperature range?
A: The device operates reliably from 0°C to 85°C (TC), supporting commercial and industrial temperature environments.


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