MT48LC16M16A2P-7E:D

The MT48LC16M16A2P-7E:D is a DRAM (Dynamic Random Access Memory) chip from Micron Technology. It is specifically a 256Mb SDRAM organized as 16M x 16 bits. This memory chip is commonly used in a variety of digital electronics applications due to its high-density storage and fast data access capabilities.
Key features include:
1. Speed: The -7E designation indicates a clock speed of 143 MHz, ensuring efficient data processing and retrieval.
2. Power Supply: Operates at a single 3.3V power supply, which is standard for many electronic components.
3. Interface: Utilizes a synchronous interface, meaning it operates in sync with an external clock signal, optimizing data throughput.
4. Package: It comes in a compact TSOP (Thin Small Outline Package), making it suitable for space-constrained applications.
5. Applications: Commonly used in computing devices, networking equipment, and consumer electronics where reliable and quick data storage is essential.
This SDRAM chip is valued for its reliability, speed, and efficient design, making it applicable in many high-performance and embedded systems.

The MT48LC16M16A2P-7E:D is a 256Mb SDRAM chip from Micron. Equivalent products would include other manufacturers' SDRAMs with similar specifications, such as the Samsung K4S281632E-TL75, Hynix HY57V641620HGT-7, and the ISSI IS42S16160D-7T. These alternatives should match in critical parameters such as density, speed, voltage, and packaging to ensure compatibility. Always verify specific compatibility based on your application requirements.

The MT48LC16M16A2P-7E:D is a DRAM component from Micron Technology. Key features include:
1. Density and Organization: 256Mb density organized as 16M x 16.
2. Access Time: Fast access time of 5.4 ns.
3. Data Transfer Rate: Operates at a data rate of 143 MHz.
4. Voltage Supply: Requires a power supply of 3.3V ± 0.3V.
5. Package Type: Available in a 54-pin TSOP II package for compact integration.
6. Operating Temperature: Standard operating temperature range from 0°C to 70°C.
7. Row Access Cycle Time: 20 ns row access cycle time.
8. Refresh Rate: Supports auto-refresh and self-refresh modes to maintain data integrity.
9. Interface: Synchronous interface that enables high-speed operation.
10. Compliance: JEDEC standard compliant for compatibility with various systems.
11. Applications: Suitable for use in computing applications like desktops, laptops, and networking equipment.
These features make the MT48LC16M16A2P-7E:D a versatile choice for various memory-intensive applications.

The MT48LC16M16A2P-7E:D is manufactured by Micron Technology, Inc. Micron is a leading American company specializing in the production of semiconductor devices, primarily focusing on memory and storage solutions. The company's product lineup includes DRAM, NAND flash memory, and other related technologies, which are essential components in a wide range of electronics, from personal computers and smartphones to servers and automotive systems. Micron is known for its innovation in memory technology and plays a significant role in the global semiconductor industry, providing advanced solutions for data storage and processing needs.

The MT48LC16M16A2P-7E:D is a 256Mb SDRAM used in various applications requiring temporary data storage and high-speed data access. Key application areas include:
1. Computing Devices: Desktops, laptops, and servers for quick data retrieval.
2. Consumer Electronics: Televisions, set-top boxes, and gaming consoles for smoother performance.
3. Networking Equipment: Routers and switches for efficient data handling.
4. Industrial Equipment: Automation systems and instrumentation requiring reliable memory performance.
5. Telecommunications: Mobile base stations and communication devices for handling large data throughput.
Its high-speed access and reliability make it suitable for performance-driven environments.

The MT48LC16M16A2P-7E:D is a DRAM (Dynamic Random Access Memory) chip from Micron's SDRAM (Synchronous DRAM) lineup. It features a TSOP (Thin Small Outline Package) for efficient space usage in electronic devices, making it suitable for high-density memory applications.