MT53E2G32D4DE-046 WT:C

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MT53E2G32D4DE-046 WT:C

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DRAM LPDDR4 64Gbit 32 200/264 TFBGA 4 WT

  • HerstellerMicron

  • Herstellerteil #MT53E2G32D4DE-046 WT:C

  • Auf Lager9319

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Attribut Wert
Packaging Tray
Standard Pack Qty 1360

Übersicht

Description

The MT53E2G32D4DE-046 WT:C is a component of the Micron Technology DRAM (Dynamic Random Access Memory) lineup. This specific model is a 16Gb (gigabit) density DDR4 memory chip, designed for high-performance applications such as servers, desktops, and other computing devices requiring efficient memory solutions. The "046" in the model number signifies a specific speed grade or binning classification, which can affect the operating frequency and power efficiency.
The "WT" label typically indicates a specific product feature or specification related to thermal properties or testing procedures. The "C" suffix may denote a particular packaging type, revision, or customer-specific version.
Overall, the MT53E2G32D4DE-046 WT:C is engineered to provide enhanced data transfer rates, improved bandwidth, and reduced power consumption compared to previous generations, making it suitable for applications requiring reliable and fast memory performance. It supports a range of DDR4 features, including error correction, on-die termination, and other advanced technologies that enable robust and scalable memory solutions.

Equivalent

The MT53E2G32D4DE-046 WT:C chip is a DRAM module from the LPDDR4 family by Micron. Equivalent products would be other LPDDR4 chips from manufacturers such as Samsung, SK Hynix, and Kingston. For instance, look for Samsung's K4FBE3D4HM-MGCH or SK Hynix's H9HCNNNCPMMLHR-NME. These equivalents should match in terms of capacity, speed, voltage, and form factor to be considered alternatives. Always verify specifications to ensure compatibility with your specific application.

Features

The MT53E2G32D4DE-046 WT:C is a DRAM component typically used in computing applications. Here's a concise overview of its features:
1. Memory Type: This is a LPDDR4 (Low Power Double Data Rate 4) DRAM, designed for high efficiency and performance in mobile and embedded systems.
2. Capacity: It has a capacity of 8Gb (gigabits), organized in 2 ranks.
3. Data Rate: The component supports high data rates, reaching up to 4266 MT/s (Mega Transfers per second), facilitating fast data processing.
4. Voltage: Operates at a low voltage of 1.1V, which helps in reducing power consumption, making it ideal for battery-powered devices.
5. I/O Width: Features a 32-bit I/O data width, allowing for efficient data throughput.
6. Package: Typically available in a compact BGA (Ball Grid Array) package, which is suitable for space-constrained applications.
7. Temperature Range: Designed to operate in a wide temperature range, supporting both industrial and consumer-grade applications.
These features make it suitable for use in smartphones, tablets, and various IoT devices, where power efficiency and high performance are crucial.

Pinout

The MT53E2G32D4DE-046 WT:C is a DRAM chip, specifically a LPDDR4 (Low Power Double Data Rate 4) SDRAM manufactured by Micron Technology. This chip is designed for high-performance and low-power applications, such as in mobile and embedded devices.
As for the pin count, the MT53E2G32D4DE package typically comes with 200 balls in a Fine-Pitch Ball Grid Array (FBGA) package. This configuration is standard for many LPDDR4 DRAM chips, allowing for efficient communication with the processor in a compact form factor.
The primary functions of the pins/balls include:
1. Data I/O (DQ): Handles data transfer to and from the memory.
2. Address/Command (CA): Used for sending commands and addressing information.
3. Clock (CK/CK#): Provides the clock signal for synchronizing the operations.
4. Power (VDD/VDDQ): Supplies power to the core and I/O.
5. Ground (VSS/VSSQ): Provides ground reference for core and I/O.
6. Other Control Signals: Includes signals like Chip Select (CS#), Reset (RESET#), and others for managing operations.
This configuration ensures high-speed data processing while maintaining low power consumption.

Manufacturer

The MT53E2G32D4DE-046 WT:C is a memory chip manufactured by Micron Technology, Inc. Micron is a prominent American company known for its role in the semiconductor industry. It specializes in the production and development of memory and storage solutions, including DRAM, NAND flash memory, and other semiconductor devices. Micron’s products are widely used across various sectors, such as consumer electronics, mobile devices, data centers, automotive, and industrial applications. The company is recognized for its innovation in memory technology and plays a significant role in advancing computing capabilities.

Application

The MT53E2G32D4DE-046 WT:C is a DRAM chip used in various applications requiring high-speed data processing and storage. It is commonly found in consumer electronics such as smartphones, tablets, and laptops, where it supports efficient multitasking and quick data access. Additionally, it is utilized in networking devices for buffering and caching, as well as in automotive systems for infotainment and advanced driver-assistance systems (ADAS). The chip is also relevant in gaming consoles, providing the necessary speed and performance for high-resolution graphics and seamless gameplay. Its versatility makes it suitable for a wide range of applications where performance and reliability are critical.

Package

The MT53E2G32D4DE-046 WT:C is a DRAM package, specifically an LPDDR4 (Low Power Double Data Rate 4) memory chip. It typically comes in a BGA (Ball Grid Array) package, which is common for such memory components to ensure a small form factor and efficient connection to the circuit board.

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