MT53E768M32D4DT-053 AIT:E

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MT53E768M32D4DT-053 AIT:E

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DRAM LPDDR4 24Gbit 32 200/264 VFBGA 4 IT

  • HerstellerMicron

  • Herstellerteil #MT53E768M32D4DT-053 AIT:E

  • Auf Lager28250

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

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Attribut Wert
Packaging Tray
Standard Pack Qty 1360

Übersicht

Description

The MT53E768M32D4DT-053 AIT:E is a type of dynamic random-access memory (DRAM) module, specifically a low-power DDR4 (LPDDR4) offering from Micron Technology. This type of memory is commonly used in mobile and embedded applications due to its energy efficiency and high performance. The module features a density of 768 megabits and is organized in a 32-bit configuration, making it suitable for devices that require efficient data processing and storage. The "AIT:E" designation typically refers to specific manufacturing or testing standards adhered to by Micron, ensuring reliability and performance. Key characteristics of this DRAM include reduced power consumption compared to standard DDR4, making it ideal for battery-powered devices, as well as high data transfer rates that support modern applications requiring fast access to large amounts of data. Overall, the MT53E768M32D4DT-053 AIT:E is designed to meet the demanding needs of contemporary computing environments while maintaining low power usage.

Equivalent

The MT53E768M32D4DT-053 AIT:E is a DRAM chip from Micron, typically used in systems requiring high-speed memory like graphics cards or gaming consoles. Equivalent products would include similar GDDR5 or GDDR6 memory chips from manufacturers such as Samsung or SK Hynix. For specific equivalents, consider Samsung's K4G80325FB-HC25 or SK Hynix's H5GQ8H24MJR-R4C, as they offer comparable specifications in terms of capacity and speed. Always check datasheets to confirm compatibility with specific applications.

Features

The MT53E768M32D4DT-053 AIT:E is a component in the domain of DRAM (Dynamic Random Access Memory) technology, specifically part of the LPDDR4 (Low Power Double Data Rate 4) category. Here are some key features:
1. Capacity: This module offers a 768Mb density, organized in a x32 configuration.
2. Low Power Consumption: As an LPDDR4 component, it is designed for reduced power usage, making it suitable for mobile and portable devices, enhancing battery life.
3. High Speed: It supports high data rates, providing efficient and swift data processing capabilities, which is crucial for modern applications requiring quick access to data.
4. Advanced Architecture: The component benefits from a sophisticated architecture that supports efficient data handling and processing, enhancing overall system performance.
5. Package Type: Typically available in a compact package suitable for integration into small form factor devices.
6. Reliability and Stability: It is designed to operate reliably under various conditions, ensuring stable performance across a range of applications.
These features make it suitable for use in advanced smartphones, tablets, and other portable electronic devices where performance and power efficiency are critical.

Pinout

The MT53E768M32D4DT-053 AIT:E is a DRAM component from Micron’s LPDDR4 (Low Power Double Data Rate 4) memory series. It features a pin count of 200 balls, typically arranged in a Fine Ball Grid Array (FBGA) package.
This component functions as a high-density, low-power memory solution commonly used in mobile and embedded applications. It provides a memory density of 24 Gb (gigabits) and operates with a data width of 32 bits. The LPDDR4 technology offers enhancements in performance and power efficiency over previous generations, making it suitable for devices requiring high-speed data access with lower power consumption, such as smartphones, tablets, and other portable electronics. Key features include deep power-down modes, low operating voltages, and high data transfer rates, which contribute to extending battery life and improving overall device performance.

Manufacturer

The MT53E768M32D4DT-053 AIT:E is a DRAM chip manufactured by Micron Technology, Inc. Micron is an American company that specializes in the production of memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron is one of the leading manufacturers of dynamic random-access memory (DRAM), NAND flash memory, and other semiconductor devices. The company serves a wide array of industries, including computing, consumer electronics, automotive, and mobile telecommunications, providing critical components for everything from personal computers and smartphones to servers and automotive systems. Micron's innovations and products are integral to the functionality and performance of a vast range of digital applications, making it a key player in the global semiconductor industry.

Application

The MT53E768M32D4DT-053 AIT:E is a DRAM chip, specifically a type of LPDDR4 (Low Power Double Data Rate 4) memory. It is commonly used in mobile devices such as smartphones and tablets due to its high performance and low power consumption. Additionally, it can be used in embedded systems, IoT devices, and automotive applications where efficient memory performance is crucial. Its low power usage makes it suitable for battery-operated devices, while its speed supports demanding applications like high-definition video processing, gaming, and AI functionalities.

Package

The MT53E768M32D4DT-053 AIT:E is a type of DRAM memory chip package from Micron Technology. It typically comes in a Ball Grid Array (BGA) package, which is common for DRAM modules. BGA allows for a higher density of connections and improved thermal performance, making it suitable for high-performance computing applications.

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