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MUN5214T1G
+StücklisteTRANS PREBIAS NPN 50V SC70-3
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HerstellerOnsemi
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Herstellerteil #MUN5214T1G
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Datenblatt MUN5214T1G DataSheet
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Paket SOT-323
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Auf Lager14437
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | onsemi,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector(Ic)(Max) | 100 mA |
| Voltage - Collector Emitter Breakdown(Max) | 50 V |
| Resistor - Base(R1) | 10 kOhms |
| Resistor - Emitter Base(R2) | 47 kOhms |
| DC Current Gain(h FE)(Min) @ Ic Vce | 80 @ 5mA, 10V |
| Vce Saturation(Max) @ Ib Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff(Max) | 500nA |
| Power - Max | 202 mW |
| Mounting Type | Surface Mount |
Übersicht
Description
An introduction to such a course would generally outline the main objectives and topics covered. This might include the curriculum focus, key learning outcomes, and any prerequisites needed. Usually, an introductory session would also highlight the teaching methods, such as lectures, seminars, or practical sessions, and specify any assessments or projects.
To get detailed information about MUN5214T1G, you would need to refer to the course syllabus or contact the department offering the course for specifics, as these details can vary widely between institutions and over time.
Equivalent
1. DTC114EE from ROHM Semiconductor
2. DTC114EETL from Toshiba
3. DTC114EET1 from ON Semiconductor
4. MMBT114 from Infineon Technologies
When selecting an equivalent, always check the specific electrical characteristics and pin configuration to ensure compatibility with your application.
Features
1. Type: PNP Bipolar Junction Transistor.
2. Package: SOT-23, which is a small, surface-mount package suitable for compact designs.
3. Polarity: PNP, meaning the transistor turns on when the base is pulled low relative to the emitter.
4. Collector-Emitter Voltage (Vce): Generally around -50V, allowing it to handle moderate voltage applications.
5. Collector Current (Ic): Typically supports up to -100mA, suitable for low-current applications.
6. Power Dissipation: Approximately 225mW, indicating the amount of power it can dissipate without damage.
7. Gain (hFE): The current gain is generally between 100 and 300, depending on the specific variant and operating conditions.
8. Applications: Used in signal processing, switching applications, and amplification in various electronic devices.
These features make the MUN5214T1G suitable for general-purpose switching and amplification tasks in various electronic circuits.
Pinout
1. Pin 1 (Base): This is the input pin for the transistor, which controls the switching operation.
2. Pin 2 (Emitter): This is the ground or negative supply pin.
3. Pin 3 (Collector): This is the output pin, where the load is connected.
The integrated resistor network simplifies circuit design by reducing the number of external components needed, providing ease of use in digital applications.
Manufacturer
Application
1. Signal Amplification: Used in amplifiers to boost audio or radio signals.
2. Switching: Employed in digital circuits for switching applications due to its fast switching speeds.
3. Oscillators: Utilized in oscillator circuits for generating periodic waveforms.
4. Voltage Regulation: Integrated into voltage regulation circuits to maintain constant output.
5. LED Drivers: Functions as a current controller in LED driver circuits.
6. Motor Control: Applied in controlling small motors within electronic devices.
These applications leverage the transistor's ability to handle moderate power levels efficiently.