MUN5314DW1T1G

Abbildungen dienen nur als Referenz

MUN5314DW1T1G

+Stückliste

TRANS PREBIAS 1NPN 1PNP 50V SC88

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Supplier onsemi
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector(Ic)(Max) 100mA
Voltage - Collector Emitter Breakdown(Max) 50V
Resistor - Base(R1) 10kOhms
Resistor - Emitter Base(R2) 47kOhms
DC Current Gain(h FE)(Min) @ Ic Vce 80 @ 5mA, 10V
Vce Saturation(Max) @ Ib Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff(Max) 500nA
Power - Max 250mW
Mounting Type Surface Mount

Übersicht

Description

"MUN5314DW1T1G" appears to be a code or identifier that doesn't directly correspond to widely recognized public information, courses, or topics. It might represent a specific course, product, or document relevant to a particular organization, institution, or company. If it pertains to a course or module, it could be part of a curriculum related to a subject such as business, technology, or another specialized field.
For an introduction, you would typically outline the purpose and scope of the course or subject, including key areas of study, objectives, and potential outcomes for participants. This might involve detailed exploration of specific themes or skills, practical applications, and any prerequisites needed.
To provide a precise introduction, additional context about what MUN5314DW1T1G specifically represents is necessary. If you are affiliated with an institution or organization that uses this code, consulting internal resources or a syllabus might offer a more detailed and accurate overview.

Equivalent

The MUN5314DW1T1G is a dual NPN digital transistor array. Equivalent products from other manufacturers may include:
1. DTC114EUA – Rohm
2. DTC114EET1 – Toshiba
3. PDTC114EU – Nexperia
4. BC846BPDW1T1G – ON Semiconductor
It's essential to compare specifications such as voltage, current ratings, and package type to ensure compatibility. Always check datasheets to confirm equivalency for your specific application.

Features

The MUN5314DW1T1G is a general-purpose NPN Bipolar Junction Transistor (BJT) with integrated resistors, designed for switching and amplification applications. It features a collector-emitter voltage (Vceo) of 50V, which allows it to handle moderate voltage levels. The device is designed with a collector current (Ic) rating of 100mA, suitable for low-current applications.
One of the key features of the MUN5314DW1T1G is its built-in biasing resistors, which simplify circuit design by reducing the number of external components required. It includes a series base resistor and a base-emitter resistor, enhancing its functionality and ease of use.
Packaged in a compact SOT-363 form factor, the MUN5314DW1T1G is suitable for space-constrained applications. It is widely used in consumer electronics, signal processing, and various control systems due to its reliability and efficiency. The transistor also offers a decent frequency response, making it a versatile choice for various electronic circuits.

Pinout

The MUN5314DW1T1G is a Dual NPN Bipolar Digital Transistor with two transistors integrated into a single package. It is manufactured by ON Semiconductor. The device is designed for digital applications, providing a compact and efficient solution for switching and amplification needs.
Pin Count:
- The MUN5314DW1T1G package contains 6 pins.
Pin Function:
- Pin 1 and Pin 4: These are the base pins for each of the NPN transistors.
- Pin 2 and Pin 5: These serve as the collector pins for the respective NPN transistors.
- Pin 3 and Pin 6: These are the emitter pins for each of the NPN transistors.
This device is typically used in applications where a small footprint is beneficial, such as in space-constrained printed circuit boards or in portable electronic devices. The integration of multiple transistors into a single package helps reduce the component count, which can simplify the design and potentially lower the overall cost of a circuit.

Manufacturer

The MUN5314DW1T1G is manufactured by ON Semiconductor, now known as onsemi. Onsemi is a leading semiconductor company that designs and manufactures a wide range of semiconductor components, including power and signal management, logic, discrete, and custom devices. Their products are integral to various sectors, including automotive, industrial, communications, computing, and consumer electronics.
Onsemi focuses on delivering innovative solutions for energy-efficient electronics, emphasizing sustainability and efficiency in their product designs. They have a significant global presence, serving numerous industries with their advanced technology and comprehensive product portfolio.

Application

The MUN5314DW1T1G is a dual NPN transistor commonly used in various electronic applications. It is suitable for amplification and switching purposes in low to medium power applications. Key areas include signal amplification in audio devices, radio frequency circuits, and general-purpose switching in consumer electronics. It can also be employed in power management systems and as a component in driving small motors or relays. Its compact size and efficient performance make it ideal for space-constrained applications and portable devices.

Package

The package type for the MUN5314DW1T1G is a SOT-363.

Produkte, die mit MUN5314DW1T1G zusammenhängen