Abbildungen dienen nur als Referenz
MURT10010
+StücklisteDIODE MODULE 100V 50A 3TOWER
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HerstellerGeneSiC Halbleiter
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Herstellerteil #MURT10010
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Datenblatt MURT10010 DataSheet
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Paket Three Tower
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Auf Lager3687
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | GeneSiC Semiconductor |
| Package / Case | Bulk |
| Part Status | Obsolete |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Current - Average Rectified(Io)(per Diode) | 50A |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 50 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Current - Reverse Leakage @ Vr | 25 µA @ 50 V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Chassis Mount |
