Abbildungen dienen nur als Referenz
MURT20060R
+StücklisteDIODE MODULE 600V 100A 3TOWER
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HerstellerGeneSiC Halbleiter
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Herstellerteil #MURT20060R
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Datenblatt MURT20060R DataSheet
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Paket Three Tower
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Auf Lager4138
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | GeneSiC Semiconductor |
| Package | Bulk |
| ProductStatus | Active |
| DiodeConfiguration | 1 Pair Common Anode |
| DiodeType | Standard |
| Voltage-DCReverse(Vr)(Max) | 600 V |
| Current-AverageRectified(Io)(perDiode) | 100A |
| Voltage-Forward(Vf)(Max)@If | 1.7 V @ 100 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| ReverseRecoveryTime(trr) | 160 ns |
| Current-ReverseLeakage@Vr | 25 µA @ 50 V |
| OperatingTemperature-Junction | -55°C ~ 150°C |
| MountingType | Chassis Mount |
| Package/Case | Three Tower |
