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MURTA40060
+StücklisteDIODE GEN PURP 600V 200A 3 TOWER
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HerstellerGeneSiC Halbleiter
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Herstellerteil #MURTA40060
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Paket Three Tower
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Auf Lager5214
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | GeneSiC Semiconductor |
| Package | Bulk |
| ProductStatus | Active |
| DiodeConfiguration | 1 Pair Common Cathode |
| DiodeType | Standard |
| Voltage-DCReverse(Vr)(Max) | 600 V |
| Current-AverageRectified(Io)(perDiode) | 200A |
| Voltage-Forward(Vf)(Max)@If | 1.7 V @ 200 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Current-ReverseLeakage@Vr | 25 µA @ 600 V |
| OperatingTemperature-Junction | -55°C ~ 150°C |
| MountingType | Chassis Mount |
| Package/Case | Three Tower |
