Abbildungen dienen nur als Referenz
DIODE GEN PURP 600V 200A 3 TOWER
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HerstellerGeneSiC Halbleiter
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Herstellerteil #MURTA40060R
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Paket Three Tower
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Auf Lager4747
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | GeneSiC Semiconductor |
| Package / Case | Bulk |
| Part Status | Active |
| Diode Configuration | 1 Pair Common Anode |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified(Io)(per Diode) | 200A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 200 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 25 µA @ 600 V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Chassis Mount |
