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MURTA600120
+StücklisteDIODE GEN 1.2KV 300A 3 TOWER
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HerstellerGeneSiC Halbleiter
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Herstellerteil #MURTA600120
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Datenblatt MURTA600120 DataSheet
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Paket Three Tower
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Auf Lager2541
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | GeneSiC Semiconductor |
| Package | Bulk |
| ProductStatus | Active |
| DiodeConfiguration | 1 Pair Common Cathode |
| DiodeType | Standard |
| Voltage-DCReverse(Vr)(Max) | 1200 V |
| Current-AverageRectified(Io)(perDiode) | 300A |
| Voltage-Forward(Vf)(Max)@If | 2.6 V @ 300 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Current-ReverseLeakage@Vr | 25 µA @ 1200 V |
| OperatingTemperature-Junction | -55°C ~ 150°C |
| MountingType | Chassis Mount |
| Package/Case | Three Tower |
