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MX29GL128ELT2I-90G
+StücklisteIC FLASH 128MBIT PARALLEL 56TSOP
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HerstellerMakronix
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Herstellerteil #MX29GL128ELT2I-90G
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Auf Lager4945
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Spezifikationen
| Attribut | Wert |
| Series | MX29GL |
| Part Status | Active |
| Base Product Number | MX29GL128 |
| DigiKey Programmable | Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 128Mbit |
| Memory Organization | 16M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 90ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 56-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 56-TSOP |
| Packaging | Tray |
| Access Time | 90 ns |
Übersicht
Description
Equivalent
- Winbond W29GL128G
- Spansion S29GL128P
- Fudan Microelectronics FM29GL128M
Note: cross-reference depends on exact package/pinout; verify against the datasheet and packaging when selecting replacements.
Features
- Density/type: 128-Mbit NOR flash memory
- Interface: parallel NOR, commonly x8 data bus (some variants may support x16)
- Speed: up to 90 MHz read clock (high-speed/fast-read options)
- Voltage and temp: operating voltage roughly 2.7–3.6 V; industrial temperature range (-40 to 85 °C)
- Memory organization: byte/word addressable with standard NOR flash command set
- Erase/program: supports sector/page erase and program operations
- Sector/Block structure: typical sectoring (sizes vary by device; see datasheet for exact blocks such as 4 KB, 64 KB, etc.)
- Endurance and retention: erase/write endurance on the order of ~100k cycles; data retention ≥ years (typical >20 years)
- Power: low power standby and/or deep power-down modes
- Protection: block protection and protection registers for security
- Packaging/compatibility: RoHS-compliant, available in standard packages (consult datasheet for exact package)
Note: exact block sizes, page size, timings, and packaging should be confirmed in the official datasheet for this exact suffix variant.
Pinout
- Function: 128-Mbit parallel NOR Flash memory with 8-bit data bus for non-volatile storage (firmware/code) supporting read, program/erase (sector/block), and random access.
Manufacturer
- What kind of company: A Taiwanese semiconductor company that designs and manufactures non-volatile memory products (NOR/NAND flash, ROM, MRAM) for embedded and consumer markets; publicly traded and globally active.
Application
- Boot firmware and execute-in-place code for microcontrollers/SoCs
- Firmware images and data storage for consumer electronics (set‑top boxes, cameras, printers)
- Automotive ECUs, instrument clusters, body electronics (firmware storage and updates)
- Industrial controls and networking equipment (routers, switches, PLCs) for program storage
- Any system needing fast random‑access nonvolatile memory for code/data
Package
Frequently Asked Questions
Q: What is the memory density and organization of the MX29GL128ELT2I-90G?
A: It is a 128Mbit NOR Flash memory, organized as 16M x 8 bits, accessed via a parallel interface with a 90ns access time.
Q: What is the operating voltage range for this device?
A: The supply voltage range is 2.7V to 3.6V, making it suitable for low-power 3V applications.
Q: What is the operating temperature range and package type?
A: It operates from -40°C to +85°C (industrial temperature range) and comes in a 56-TSOP (TFSOP) surface-mount package.
Q: Is this component suitable for code execution in embedded systems?
A: Yes, as a parallel NOR Flash with 90ns access time, it is ideal for XIP (eXecute-in-Place) applications like firmware storage in embedded systems.
Q: What is the write cycle time for word or page programming?
A: The typical write cycle time is 90ns for both word and page programming operations.
Q: Can this part be used in automotive or industrial environments?
A: Yes, its -40°C to +85°C industrial temperature rating and non-volatile NOR technology make it reliable for industrial control systems.