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MX29LV800CBXBI-70G
+StücklisteIC FLASH 8MBIT PARALLEL 48TFBGA
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HerstellerMakronix
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Herstellerteil #MX29LV800CBXBI-70G
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Auf Lager9628
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Spezifikationen
| Attribut | Wert |
| Series | MX29LV |
| PartStatus | Active |
| BaseProductNumber | MX29LV800 |
| DigiKeyProgrammable | Not Verified |
| MemoryType | Non-Volatile |
| MemoryFormat | FLASH |
| Technology | FLASH - NOR |
| MemorySize | 8Mbit |
| MemoryOrganization | 1M x 8 |
| MemoryInterface | Parallel |
| WriteCycleTime-Word,Page | 70ns |
| Voltage-Supply | 2.7V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package | 48-TFBGA, CSPBGA |
| SupplierDevicePackage | 48-TFBGA, CSP (6x8) |
| Packaging | Tray |
| AccessTime | 70 ns |
Übersicht
Description
The device supports sector erase architecture, allowing individual sectors to be erased without affecting the rest of the memory, which provides greater flexibility and efficiency in data management. It also has an automatic programming and erase timing feature, enhancing ease of use.
With a data retention span of over 20 years and an endurance of 100,000 program/erase cycles per sector, the MX29LV800CBXBI-70G is highly durable. It operates in a temperature range of -40°C to 85°C, making it suitable for industrial applications. The chip comes in various packages, including TSOP and SOP, facilitating integration into different hardware designs.
Equivalent
1. SST39VF800A by Microchip Technology
2. AM29LV800BB by AMD/Spansion
3. W29GL800CB by Winbond
These alternatives provide similar features such as memory size, voltage, and speed, but it's crucial to verify compatibility with your specific application.
Features
1. Architecture: The memory is organized as 1M x 8 bits or 512K x 16 bits.
2. Voltage: Operates at a low voltage range of 2.7V to 3.6V, making it suitable for battery-powered applications.
3. Speed: Access time is 70 nanoseconds, making it suitable for high-speed applications.
4. Sector Architecture: Supports flexible sector architecture with sectors that can be erased independently, allowing for efficient memory management.
5. Endurance: Offers at least 100,000 program/erase cycles per sector, ensuring longevity.
6. Erase/Programming: Supports sector erase and chip erase operations. The programming is done via command register using standard microprocessor write timings.
7. Data Protection: Includes hardware and software data protection features to prevent accidental programming or erasure.
8. Packaging: Typically available in a 48-pin TSOP package.
This combination of features makes the MX29LV800CBXBI-70G suitable for embedded systems requiring reliable, high-speed flash memory.