MX35UF1GE4AC-Z4I

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MX35UF1GE4AC-Z4I

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IC FLASH 1GBIT SPI/QUAD 8WSON

  • HerstellerMakronix

  • Herstellerteil #MX35UF1GE4AC-Z4I

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Spezifikationen

Attribut Wert
Series MX35UF
PartStatus Active
BaseProductNumber MX35UF1
MemoryType Non-Volatile
MemoryFormat FLASH
Technology FLASH - NAND (SLC)
MemorySize 1Gbit
MemoryOrganization 256M x 4
MemoryInterface SPI - Quad I/O
ClockFrequency 104 MHz
WriteCycleTime-Word,Page 660µs
Voltage-Supply 1.7V ~ 1.95V
OperatingTemperature -40°C ~ 85°C (TA)
MountingType Surface Mount
Package 8-WDFN Exposed Pad
SupplierDevicePackage 8-WSON (8x6)
Packaging Tray
AccessTime 8 ns

Übersicht

Description

MX35UF1GE4AC-Z4I is a Macronix serial NOR flash memory device. It provides nonvolatile storage (1 Gbit, i.e., ~128 MB) for firmware and code in embedded systems. The part uses a SPI-compatible interface and typically supports fast read and multi-I/O modes (Dual/Quad SPI in configured variants) for higher throughput. It offers standard memory operations such as page programming and sector/block erases, plus built-in security features (e.g., protection and OTP areas where available). The -Z4I suffix identifies a specific package/temperature grade and exact electrical specs; consult the official Macronix datasheet for the precise parameters, voltage range, timing, and recommended operating conditions. Common uses include microcontroller boot code, firmware storage in IoT and automotive applications, and other embedded storage needs.

Equivalent

Direct cross: Micron MT35UF1GE4AC. This is the drop-in equivalent for Macronix MX35UF1GE4AC-Z4I. For broader substitutes, please share capacity, packaging, and speed; I’ll pull additional cross-references (e.g., Kioxia/T Toshiba families).

Features

MX35UF1GE4AC-Z4I is a Macronix Serial NOR Flash memory. Key features:
- Capacity: 1 Gbit (128 MB) serial NOR flash
- Interface: SPI with Dual/Quad I/O (DQ) SPI support
- Voltage: 2.7–3.6 V operation
- Package: 8-pin (Z4I variant)
- Temp range: -40°C to 85°C (industrial)
- Memory organization: 256-byte pages; 4 KB sectors; larger block sizes (e.g., 64 KB)
- Erase/Program: supports sector, block, and chip erase; page program
- Read: fast and standard read options
- Security: hardware write protection and related features
Suitable for boot code, firmware storage, and updates where compact, low-power serial flash is required. For exact speeds, timings, and block/sector counts, please consult the official datasheet.

Pinout

8 pins. It’s a serial NOR flash memory (Quad-SPI) used for firmware/data storage. Pinout includes VCC, GND, CS, CLK, and IO0–IO3 (data lines).

Manufacturer

Manufacturer: Macronix International Co., Ltd. (MXIC). It is a Taiwan-based semiconductor company that designs and manufactures non-volatile memory ICs (NOR/NAND flash, ROM, etc.), serving as a global memory solutions provider.

Application

MX35UF1GE4AC-Z4I is a NAND flash memory device. Typical application areas include:
- Solid-state drives (SSDs) and other storage devices
- Embedded storage in mobile devices, tablets, laptops
- USB flash drives and memory cards (SD/microSD)
- Consumer electronics (digital cameras, camcorders, set-top boxes, game consoles)
- Industrial and automotive electronics (telematics, infotainment, data logging)
- Enterprise storage as raw NAND for custom controller solutions
These cover consumer, industrial, and automotive use cases requiring reliable non-volatile memory.

Package

I don’t have the MX35UF1GE4AC-Z4I package type memorized. The exact package (e.g., FBGA/TSOP) is in the official datasheet. Please share a link or allow me to fetch it, and I’ll extract the package type.

Frequently Asked Questions


Q: What is the memory capacity and organization of the MX35UF1GE4AC-Z4I?
A: It has a 1Gbit memory size organized as 256M x 4 bits, using SLC NAND Flash technology.


Q: Does this component support Quad SPI interface?
A: Yes, it features a SPI - Quad I/O interface, enabling high-speed data transfer at up to 104 MHz clock frequency.


Q: What is the operating voltage range for this flash memory?
A: The supply voltage range is 1.7V to 1.95V, making it suitable for low-power embedded applications.


Q: What is the typical write cycle time for a page or word?
A: The write cycle time is 660μs per word or page, ensuring efficient programming for non-volatile storage.


Q: Is this memory suitable for industrial temperature environments?
A: Yes, it operates over -40°C to 85°C, making it ideal for industrial or automotive-grade applications.


Q: What package options are available for this device?
A: It comes in an 8-WDFN Exposed Pad package, with the supplier device package being 8-WSON (8x6mm), suitable for surface mount assembly.


Q: Does this component use NAND or NOR flash technology?
A: It uses FLASH - NAND (SLC) technology, optimized for high-density data storage with reliable single-level cell performance.


Q: What is the access time for this memory device?
A: The access time is 8 ns, providing fast read operations for real-time data retrieval.


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