NCE2060K

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NCE2060K

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  • HerstellerWuxi NCE Power Halbleiter

  • Herstellerteil #NCE2060K

  • Datenblatt NCE2060K DataSheet

  • Auf Lager16288

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Spezifikationen

Attribut Wert
Manufacturer Wuxi NCE Power Semiconductor
Package / Case TO-252-2(DPAK)
Operating Temperature -55℃~+150℃
Current - Continuous Drain(Id) 60A
Pd - Power Dissipation 60W
Drain to Source Voltage (Vdss) 20V
Rds(on) 6mΩ@4.5V,20A
Gate Threshold Voltage (Vgs(th) @ Id) 750mV
Type 1 N-channel
Gate Charge(Qg) 27nC@10V
Input Capacitance(Ciss @ Vds) 2nF@10V
Reverse Transfer Capacitance (Crss @ Vds) 200pF@10V

Übersicht

Equivalent

The NCE2060K is a power MOSFET. Equivalent or similar products include:
- Infineon IPD90N04S4
- STMicroelectronics STP80NF55-06
- Vishay SiR458DP
- ON Semiconductor NTMFS5C628NL
These alternatives offer comparable voltage, current, and RDS(on) specifications. Always verify datasheet parameters for exact compatibility.

Application

The NCE2060K is a high-performance N-channel MOSFET commonly used in:
1. Power Management – DC-DC converters, voltage regulation.
2. Motor Control – Drives for brushed/BLDC motors.
3. Switching Circuits – High-efficiency load switching.
4. Automotive Systems – LED drivers, battery management.
5. Industrial Applications – Power supplies, inverters.
Its low on-resistance and high current handling make it ideal for energy-efficient, high-power applications.

Package

The NCE2060K is typically available in a TO-220 package, a common through-hole mounting style for power transistors. This package offers good thermal performance and ease of soldering, making it suitable for medium-power applications. The TO-220 design includes a metal tab for heat dissipation, often used with a heatsink. Exact specs may vary by manufacturer, so always check the datasheet.

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