NCE40H12

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NCE40H12

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  • HerstellerWuxi NCE Power Halbleiter

  • Herstellerteil #NCE40H12

  • Datenblatt NCE40H12 DataSheet

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Spezifikationen

Attribut Wert
Manufacturer Wuxi NCE Power Semiconductor
Package TO-220
OperatingTemperature -55℃~+175℃
Current-ContinuousDrain(Id) 120A
Pd-PowerDissipation 130W
DraintoSourceVoltage 40V
RDS(on) 4mΩ@10V,20A
GateThresholdVoltage(Vgs(th)@Id) 1.2V
Type 1 N-channel
GateCharge(Qg) 75nC@10V
InputCapacitance(Ciss@Vds) 5.4nF@20V
ReverseTransferCapacitance(Crss@Vds) 380pF

Übersicht

Description

The NCE40H12 is a high-performance N-channel MOSFET designed for power management applications. Key features include:
- Voltage Rating: 40V
- Current Capacity: 120A (continuous)
- Low On-Resistance (RDS(on)): ~1.2mΩ (typical)
- Fast Switching: Optimized for efficiency in DC-DC converters, motor drives, and battery systems.
- Package: TO-247 or similar, ensuring robust thermal performance.
Ideal for automotive, industrial, and renewable energy systems, the NCE40H12 balances high current handling with minimal conduction losses. Its low gate charge enhances switching efficiency, making it suitable for high-frequency applications.
For detailed specs, refer to the datasheet from the manufacturer (e.g., NCE Power).

Equivalent

The NCE40H12 is a 40A, 1200V IGBT module. Equivalent alternatives include:
- Infineon: FF400R12KE3
- Mitsubishi: CM400H-12A
- Fuji Electric: 2MBI400H-120
- Semikron: SKM400GB12T4
These modules offer similar voltage and current ratings, making them suitable replacements. Always verify pin compatibility and thermal characteristics before substitution.

Features

The NCE40H12 is a high-performance N-channel power MOSFET with the following key features:
- Voltage Rating: 40V
- Current Rating: 120A (continuous)
- Low On-Resistance (RDS(on)): Typically 1.8mΩ (at VGS = 10V)
- Fast Switching: Optimized for high-efficiency power applications
- Robust Design: High avalanche energy capability
- Package: TO-247, ensuring good thermal performance
- Applications: Suitable for motor control, power supplies, and DC-DC converters
Its low RDS(on) and high current handling make it ideal for high-power, low-loss switching.

Pinout

The NCE40H12 is a 40A/1200V IGBT module with a 3-pin configuration (collector, emitter, gate). It integrates a fast recovery diode for freewheeling and is designed for high-power switching applications like motor drives, inverters, and power supplies. Key features include low saturation voltage (VCE(sat)), high-speed switching, and robust thermal performance.
Pinout:
1. Collector (C) – High-voltage input.
2. Emitter (E) – Output/ground reference.
3. Gate (G) – Control signal input (typically +15V/-15V for switching).
Compact and efficient, it suits industrial and automotive systems requiring high current/voltage handling.

Application

The NCE40H12 is a high-performance N-channel MOSFET commonly used in:
1. Power Supplies – Efficient switching in DC-DC converters and SMPS.
2. Motor Control – Drives for brushed/BLDC motors in industrial and automotive systems.
3. Solar Inverters – Energy conversion in renewable power systems.
4. Battery Management – Protection and charging circuits for Li-ion/power tool batteries.
5. LED Lighting – High-efficiency drivers for industrial/commercial lighting.
Its low on-resistance (RDS(on)) and high current handling (40V/120A) make it ideal for high-power, fast-switching applications.

Package

The NCE40H12 is a power MOSFET module typically housed in a TO-247 package. This package type is robust, suitable for high-power applications, and features three leads for gate, drain, and source connections. It offers efficient thermal performance and is commonly used in switching power supplies, motor drives, and inverters. The TO-247 design ensures durability and effective heat dissipation.

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