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NCE60P50K
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HerstellerWuxi NCE Power Halbleiter
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Herstellerteil #NCE60P50K
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Datenblatt NCE60P50K DataSheet
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Auf Lager24047
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Spezifikationen
| Attribut | Wert |
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-252-2(DPAK) |
| OperatingTemperature | -55℃~+150℃ |
| Current-ContinuousDrain(Id) | 50A |
| Pd-PowerDissipation | 95W |
| DraintoSourceVoltage | 60V |
| RDS(on) | 28mΩ@10V,20A |
| GateThresholdVoltage(Vgs(th)@Id) | 2V |
| Type | 1 piece P-channel |
| GateCharge(Qg) | 75nC |
| InputCapacitance(Ciss@Vds) | 6.46nF@25V |
| ReverseTransferCapacitance(Crss@Vds) | 535pF@25V |
Übersicht
Description
Key specifications of the NCE60P50K include a drain-source voltage (V_DS) of -60V and a continuous drain current (I_D) of -50A, along with a low on-state resistance (R_DS(on)), which helps reduce power loss and increase efficiency. Its P-channel configuration means it is typically used in applications where positive voltage control is required, and it can be easily turned on or off by varying the gate voltage relative to the source. The device offers robustness and reliability, with features such as overcurrent protection and thermal resistance considerations that enhance its performance in demanding environments.
Equivalent
1. IRF9540N - 100V, 23A, P-channel MOSFET.
2. FQP27P06 - 60V, 27A.
3. STP60PF06 - 60V, 50A.
Always verify the exact specifications and pin configurations match your requirements before substitution.
Features
1. P-Channel MOSFET: It's designed to operate as a P-channel enhancement-mode device.
2. Voltage and Current Ratings: It typically supports a drain-source voltage of up to -60V and a continuous drain current of -50A, making it suitable for moderate to high-power applications.
3. Low On-State Resistance: This feature ensures minimal power loss and enhances efficiency, which is crucial for high-performance applications.
4. Thermal Performance: The NCE60P50K offers good thermal performance, essential for maintaining stability and reliability under high power conditions.
5. Package Options: It is often available in a variety of package types, which provides flexibility in design and implementation.
6. Applications: Common uses include DC-DC converters, power management circuits, and other switching applications where efficient power handling is critical.
These features make the NCE60P50K suitable for various industrial and consumer electronic applications that require efficient power switching and management.
Pinout
1. Gate (G): Controls the conductivity between the drain and source terminals. By applying a voltage to the gate, the MOSFET is turned on or off.
2. Drain (D): The terminal through which the main current flows from source to drain when the MOSFET is on.
3. Source (S): The terminal where the current enters the MOSFET in a P-channel.
For specific package types and pin configurations, it is essential to refer to the datasheet of the NCE60P50K, as the pin layout can vary depending on the package. Always consult the manufacturer's documentation for precise and detailed information.
Manufacturer
Application
1. Power Supply Circuits: Used in DC-DC converters and SMPS for efficient load switching and voltage regulation.
2. Motor Control: Employed in controlling speed and direction in DC motor drives.
3. Load Switches: Acts as a switch for controlling power to various loads in electronic devices.
4. Battery Management: Used in battery protection circuits due to its low on-resistance and efficient switching.
5. Automotive Applications: Suitable for automotive electronic systems requiring high reliability and robust performance.
Its low on-resistance and high current capability make it ideal for these applications.