NCP51820AMNTWG

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NCP51820AMNTWG

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IC GATE DRVR HALF-BRIDGE HI SPD

  • HerstellerOnsemi

  • Herstellerteil #NCP51820AMNTWG

  • Paket VFQFN-15

  • Auf Lager1762

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Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
Driven Configuration Half-Bridge
Channel Type Independent
Gate Type N-Channel, P-Channel MOSFET
Voltage - Supply 9V ~ 17V
Current - Peak Output(Source Sink) 1A, 2A
Input Type Non-Inverting
High Side Voltage - Max(Bootstrap) 670 V
Rise / Fall Time(Typ) 2ns, 1.5ns
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount

Übersicht

Description

The NCP51820AMNTWG is a high-performance half-bridge gate driver designed for power management applications. It is produced by ON Semiconductor and is known for its ability to efficiently drive high-side and low-side N-channel MOSFETs or IGBTs. The device is characterized by its high-speed operation, featuring a 5V to 18V input voltage range and a drive capability that supports fast switching for increased efficiency.
One of the key features of the NCP51820AMNTWG is its robust protection mechanisms. These include under-voltage lockout (UVLO) for both high-side and low-side drivers, as well as thermal shutdown protection, ensuring reliable operation even under demanding conditions. Additionally, it provides a level-shifting capability up to 150V, making it suitable for a wide range of applications, including motor drives, power supplies, and other high-voltage systems.
The NCP51820AMNTWG comes in a compact package, allowing for space-saving designs. Its combination of speed, efficiency, and protection makes it a versatile choice for engineers looking to optimize power management in their systems.

Equivalent

The NCP51820AMNTWG is a gate driver IC from ON Semiconductor. Equivalent products with similar functionality include:
1. IR2110 from Infineon Technologies
2. LM5113 from Texas Instruments
3. FAN7393 from Fairchild Semiconductor (now part of ON Semiconductor)
4. MAX15024 from Maxim Integrated (now part of Analog Devices)
These gate drivers are used for similar applications in driving high-side and low-side MOSFETs or IGBTs, though specifications may vary slightly. Always consult datasheets to ensure compatibility with your specific application.

Features

The NCP51820AMNTWG is a high-performance, isolated gate driver designed for driving wide bandgap power devices such as GaN (Gallium Nitride) transistors. Key features include:
1. High-Speed Operation: Capable of delivering fast switching with a propagation delay of just 28 ns, making it suitable for high-frequency applications.
2. High Output Current: Provides strong drive capabilities with a peak output current of 5 A.
3. Wide Supply Range: Operates within a wide input voltage range of 4.5 V to 18 V, accommodating different power supply configurations.
4. Isolation Rating: Offers robust galvanic isolation up to 3.75 kV RMS, enhancing safety and performance in high-voltage applications.
5. Protection Features: Includes undervoltage lockout (UVLO) and overcurrent protection to prevent damage to both the driver and the power transistors.
6. Compact Package: Housed in a compact DFN-8 package, suitable for space-constrained designs.
7. Efficiency and Reliability: Enhances the efficiency and reliability of power conversion systems, making it ideal for use in industrial, automotive, and renewable energy applications.
These features make the NCP51820AMNTWG an excellent choice for driving GaN power devices in demanding applications.

Pinout

The NCP51820AMNTWG is a high-speed, high-performance half-bridge gate driver designed by ON Semiconductor. It features a 6-pin configuration. The primary function of this device is to drive the high-side and low-side N-channel MOSFETs in a half-bridge configuration, which is commonly used in applications like DC-DC converters, motor drives, and other power electronics systems.
The pins of the NCP51820AMNTWG are typically configured for the following functions:
1. HB (High-Side Bias Voltage): Provides the supply voltage for the high-side driver.
2. HO (High-Side Output): Connects to the gate of the high-side N-channel MOSFET.
3. HS (High-Side Source): Connects to the source of the high-side N-channel MOSFET, often linked to the load.
4. LO (Low-Side Output): Connects to the gate of the low-side N-channel MOSFET.
5. VCC (Supply Voltage): Provides the supply voltage for the low-side driver.
6. COM (Common Ground): The common ground reference for the device.
This configuration allows the device to effectively manage the switching of the MOSFETs, improving efficiency and performance in power management applications.

Manufacturer

The NCP51820AMNTWG is manufactured by ON Semiconductor, known as onsemi. Onsemi is a semiconductor manufacturing company that specializes in providing a wide range of energy-efficient solutions, including power and signal management, logic, discrete, and custom devices. The company caters to various markets such as automotive, industrial, cloud power, and IoT. Onsemi's products are crucial in applications that require efficient power management and signal processing, supporting advancements in technology and sustainability.

Application

The NCP51820AMNTWG is a high-speed gate driver used primarily in power electronics applications. Key areas include:
1. Electric Vehicles (EVs): Facilitates efficient power management in EV powertrains and charging systems.
2. Renewable Energy Systems: Enhances the performance of solar inverters and wind turbine converters.
3. Industrial Motor Drives: Supports precise control in industrial automation and robotics.
4. Power Supplies: Improves efficiency in switched-mode power supplies and DC-DC converters.
5. Consumer Electronics: Used in high-performance computing and advanced audio systems.
Its high-speed switching capability and robustness make it ideal for applications requiring efficient power conversion and management.

Package

The NCP51820AMNTWG is packaged in a WDFN (Wettable Flank Dual Flat No-leads) package with 14 pins. This packaging enhances solder joint reliability and offers a compact footprint suitable for high-density designs.

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