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NCP51820AMNTWG
+StücklisteIC GATE DRVR HALF-BRIDGE HI SPD
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HerstellerOnsemi
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Herstellerteil #NCP51820AMNTWG
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Paket VFQFN-15
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Auf Lager1762
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Driven Configuration | Half-Bridge |
| Channel Type | Independent |
| Gate Type | N-Channel, P-Channel MOSFET |
| Voltage - Supply | 9V ~ 17V |
| Current - Peak Output(Source Sink) | 1A, 2A |
| Input Type | Non-Inverting |
| High Side Voltage - Max(Bootstrap) | 670 V |
| Rise / Fall Time(Typ) | 2ns, 1.5ns |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
Übersicht
Description
One of the key features of the NCP51820AMNTWG is its robust protection mechanisms. These include under-voltage lockout (UVLO) for both high-side and low-side drivers, as well as thermal shutdown protection, ensuring reliable operation even under demanding conditions. Additionally, it provides a level-shifting capability up to 150V, making it suitable for a wide range of applications, including motor drives, power supplies, and other high-voltage systems.
The NCP51820AMNTWG comes in a compact package, allowing for space-saving designs. Its combination of speed, efficiency, and protection makes it a versatile choice for engineers looking to optimize power management in their systems.
Equivalent
1. IR2110 from Infineon Technologies
2. LM5113 from Texas Instruments
3. FAN7393 from Fairchild Semiconductor (now part of ON Semiconductor)
4. MAX15024 from Maxim Integrated (now part of Analog Devices)
These gate drivers are used for similar applications in driving high-side and low-side MOSFETs or IGBTs, though specifications may vary slightly. Always consult datasheets to ensure compatibility with your specific application.
Features
1. High-Speed Operation: Capable of delivering fast switching with a propagation delay of just 28 ns, making it suitable for high-frequency applications.
2. High Output Current: Provides strong drive capabilities with a peak output current of 5 A.
3. Wide Supply Range: Operates within a wide input voltage range of 4.5 V to 18 V, accommodating different power supply configurations.
4. Isolation Rating: Offers robust galvanic isolation up to 3.75 kV RMS, enhancing safety and performance in high-voltage applications.
5. Protection Features: Includes undervoltage lockout (UVLO) and overcurrent protection to prevent damage to both the driver and the power transistors.
6. Compact Package: Housed in a compact DFN-8 package, suitable for space-constrained designs.
7. Efficiency and Reliability: Enhances the efficiency and reliability of power conversion systems, making it ideal for use in industrial, automotive, and renewable energy applications.
These features make the NCP51820AMNTWG an excellent choice for driving GaN power devices in demanding applications.
Pinout
The pins of the NCP51820AMNTWG are typically configured for the following functions:
1. HB (High-Side Bias Voltage): Provides the supply voltage for the high-side driver.
2. HO (High-Side Output): Connects to the gate of the high-side N-channel MOSFET.
3. HS (High-Side Source): Connects to the source of the high-side N-channel MOSFET, often linked to the load.
4. LO (Low-Side Output): Connects to the gate of the low-side N-channel MOSFET.
5. VCC (Supply Voltage): Provides the supply voltage for the low-side driver.
6. COM (Common Ground): The common ground reference for the device.
This configuration allows the device to effectively manage the switching of the MOSFETs, improving efficiency and performance in power management applications.
Manufacturer
Application
1. Electric Vehicles (EVs): Facilitates efficient power management in EV powertrains and charging systems.
2. Renewable Energy Systems: Enhances the performance of solar inverters and wind turbine converters.
3. Industrial Motor Drives: Supports precise control in industrial automation and robotics.
4. Power Supplies: Improves efficiency in switched-mode power supplies and DC-DC converters.
5. Consumer Electronics: Used in high-performance computing and advanced audio systems.
Its high-speed switching capability and robustness make it ideal for applications requiring efficient power conversion and management.