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NCP81080MNTBG
+StücklisteIC GATE DRVR HALF-BRIDGE 8DFN
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HerstellerOnsemi
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Herstellerteil #NCP81080MNTBG
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Paket DFN-8
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Auf Lager2487
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Synchronous |
| NumberofDrivers | 2 |
| GateType | N-Channel MOSFET |
| Voltage-Supply | 5.5V ~ 20V |
| LogicVoltage-VILVIH | 1.2V, 1.8V |
| Current-PeakOutput(SourceSink) | 500mA, 800mA |
| InputType | TTL |
| Rise/FallTime(Typ) | 19ns, 17ns |
| OperatingTemperature | -40°C ~ 140°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-VFDFN Exposed Pad |
Übersicht
Description
It also includes advanced protection mechanisms like over-current protection (OCP), over-voltage protection (OVP), and thermal shutdown to ensure system reliability and safety. The NCP81080MNTBG is well-suited for compact PCB layouts due to its small form factor and is commonly used in environments where space-saving is crucial. Its adaptability and robust performance make it a reliable choice for developers looking to implement efficient and stable power supply solutions in various electronic devices.
Equivalent
1. TPS51200 by Texas Instruments
2. MAX1518B by Maxim Integrated
3. ISL6217 by Renesas Electronics
4. RT8288A by Richtek
These alternatives provide similar functionality in terms of power management and control for DC-DC converters. Always verify compatibility with your specific application requirements before substituting.
Features
1. High-Speed Operation: Capable of driving MOSFETs at high frequencies, enhancing efficiency in power conversion processes.
2. Adaptive Dead-Time Control: Minimizes the time during which both high-side and low-side MOSFETs are off, reducing switching losses and improving efficiency.
3. Bootstrap Diode: Integrated bootstrap diode simplifies the design and reduces component count.
4. Under-Voltage Lockout (UVLO): Protects the MOSFETs from operating under insufficient voltage conditions.
5. Thermal Protection: Ensures device protection against overheating, enhancing reliability.
6. Compact Package: Available in a small footprint package, making it ideal for space-constrained applications.
These features make the NCP81080MNTBG suitable for use in computing, telecommunications, and other high-power density applications.
Pinout
1. VCC (Pin 1): Power supply input for the driver.
2. BOOT (Pin 2): Bootstrap capacitor connection for the high-side driver.
3. PWM (Pin 3): PWM input signal to control the driver.
4. GND (Pin 4): Ground connection.
5. VIN (Pin 5): Supply voltage input for the driver.
6. PHASE (Pin 6): Connection to the switching node of the high-side MOSFET.
7. LGATE (Pin 7): Output to control the gate of the low-side MOSFET.
8. UGATE (Pin 8): Output to control the gate of the high-side MOSFET.
This driver is designed to optimize efficiency and performance in power management, providing necessary control signals to drive both high-side and low-side MOSFETs in a synchronous buck converter configuration.
Manufacturer
Application
1. Consumer Electronics: Ensures efficient power delivery in devices like smartphones, tablets, and laptops.
2. Industrial Systems: Provides reliable power management in automation and control systems.
3. Telecommunications: Supports power regulation in networking equipment.
4. Computing: Used in servers and data centers for stable power supply.
5. Automotive: Assists in power management for in-vehicle electronics.
Its versatility and efficiency make it suitable for any application needing robust power management solutions.