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NDC652P
+StücklisteMOSFET P-CH 30V 2.4A SUPERSOT6
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HerstellerOnsemi
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Herstellerteil #NDC652P
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Datenblatt NDC652P DataSheet
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Auf Lager2395
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Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 3.1A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Vgs (Max) | -20V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 15 V |
| Power Dissipation (Max) | 1.6W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SuperSOT™-6 |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Base Product Number | NDC652 |
Übersicht
Description
For example, the NDC code is often formatted as a 10-digit number divided into three segments: the labeler code, the product code, and the package code. This system helps healthcare professionals and pharmacists accurately identify medications for prescription and dispensing.
To get detailed information about NDC652P, including its uses, dosage recommendations, side effects, and other relevant data, it’s essential to consult a healthcare provider or access official drug databases. Always ensure you have the most current and specific information when dealing with medications.
Equivalent
1. LM358 - A popular dual op-amp with similar characteristics.
2. TL072 - A low-noise, JFET-input dual op-amp.
3. MCP602 - A dual op-amp from Microchip with rail-to-rail output.
4. LMV358 - A low-voltage version of LM358
Always verify specifications to ensure compatibility with your application.
Features
1. High Processing Speed: Operates at clock speeds up to 100 MHz, enabling fast data processing.
2. Memory: Equipped with up to 512 KB of flash memory and 128 KB of SRAM for robust application storage.
3. Connectivity: Supports multiple communication interfaces, including UART, SPI, I2C, and CAN, facilitating seamless integration with various devices.
4. Peripheral Support: Offers a range of built-in peripherals like timers, ADC/DAC converters, and GPIOs for extensive application flexibility.
5. Low Power Consumption: Designed for energy efficiency, making it suitable for battery-operated devices.
6. Development Tools: Compatible with popular development environments, providing easy programming and debugging options.
Overall, the NDC652P is an ideal choice for applications in automation, IoT, and consumer electronics, combining performance with an extensive feature set.
Pinout
The typical pin configuration includes:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Drain 1 (D1): Output for the first MOSFET.
3. Source 1 (S1): Source for the first MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Drain 2 (D2): Output for the second MOSFET.
6. Source 2 (S2): Source for the second MOSFET.
7. Drain 1 (D1): Common connection for both MOSFETs.
8. Source 2 (S2): Common ground or source reference.
Overall, the NDC652P provides efficient switching capabilities for various power applications.