NGTB25N120FL3WG

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NGTB25N120FL3WG

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IGBT 1200V 100A TO247

  • HerstellerOnsemi

  • Herstellerteil #NGTB25N120FL3WG

  • Paket TO-247-3

  • Auf Lager6183

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Spezifikationen

Attribut Wert
Package / Case Tube
Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown(Max) 1200 V
Current - Collector(Ic)(Max) 100 A
Current - Collector Pulsed(Icm) 100 A
Vce(on)(Max) @ Vge Ic 2.4V @ 15V, 25A
Power - Max 349 W
Switching Energy 1mJ (on), 700µJ (off)
Input Type Standard
Gate Charge 136 nC
Td(on / off) @ 25°C 15ns/109ns
Test Condition 600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr) 114 ns
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole

Übersicht

Description

The NGTB25N120FL3WG is a high-performance 1200V, 25A IGBT (Insulated Gate Bipolar Transistor) from ON Semiconductor, designed for power switching applications.
### Key Features:
- Low VCE(sat) (1.85V typical) for reduced conduction losses.
- Fast switching with low turn-on/off losses, improving efficiency.
- High current capability (25A continuous, 50A pulsed).
- Temperature-stable operation (-55°C to +150°C).
- Integrated anti-parallel diode for simplified circuit design.
### Applications:
- Motor drives, inverters, UPS systems, and industrial power supplies.
### Package:
- TO-247-3L (robust thermal performance).
This IGBT is optimized for high-efficiency, high-frequency switching in demanding environments.

Equivalent

Equivalent products to the NGTB25N120FL3WG (1200V, 25A IGBT) include:
- IRG4BC30KD (Infineon)
- FGA25N120ANTD (Fairchild/ON Semi)
- HGTG20N120BND (Microsemi)
- STGW25H120DF (STMicroelectronics)
These are similar in voltage/current ratings and package (TO-247 or equivalent). Verify datasheets for exact compatibility.

Features

The NGTB25N120FL3WG is an IGBT (Insulated Gate Bipolar Transistor) with the following key features:
- Voltage Rating: 1200V
- Current Rating: 25A (continuous)
- Low VCE(sat): 1.85V (typical) for reduced conduction losses
- Fast Switching: Optimized for high-frequency applications
- High Temperature Operation: Up to 175°C
- Robust & Reliable: Features short-circuit ruggedness
- Low Gate Charge (QG): Enhances switching efficiency
- Trench Field Stop Technology: Improves efficiency and thermal performance
- Package: TO-247 (3-pin) for easy mounting and heat dissipation
Ideal for power converters, motor drives, and industrial applications.

Manufacturer

The NGTB25N120FL3WG is manufactured by ON Semiconductor (now known as onsemi).
onsemi is a global semiconductor company specializing in power management, analog, and sensor technologies. They provide solutions for automotive, industrial, and consumer electronics, focusing on energy efficiency and high-performance applications.
The NGTB25N120FL3WG is an IGBT (Insulated Gate Bipolar Transistor) designed for high-power switching applications.

Application

The NGTB25N120FL3WG is an IGBT (Insulated Gate Bipolar Transistor) designed for high-power switching applications. Key application areas include:
- Motor Drives: Used in industrial and automotive motor control systems.
- Power Supplies: High-efficiency converters and inverters.
- Renewable Energy: Solar inverters and wind power systems.
- Induction Heating: Industrial heating equipment.
- UPS (Uninterruptible Power Supplies): Ensures stable power delivery.
Its 1200V/25A rating and low saturation voltage make it suitable for energy-efficient, high-frequency switching in demanding environments.

Package

The NGTB25N120FL3WG is an IGBT (Insulated Gate Bipolar Transistor) in a TO-247-3L package. This package type is a through-hole, three-lead design, commonly used for high-power applications due to its robust thermal and electrical performance. It features a flange for heatsink mounting, ensuring efficient heat dissipation. Suitable for industrial and automotive applications requiring high voltage and current handling.

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