Abbildungen dienen nur als Referenz
NGTB50N120FL2WG
+StücklisteIGBT 1200V 100A 535W TO247
-
HerstellerOnsemi
-
Herstellerteil #NGTB50N120FL2WG
-
Paket TO-247
-
Auf Lager5511
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tube |
| Part Status | Active |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown(Max) | 1200 V |
| Current - Collector(Ic)(Max) | 100 A |
| Current - Collector Pulsed(Icm) | 200 A |
| Vce(on)(Max) @ Vge Ic | 2.2V @ 15V, 50A |
| Power - Max | 535 W |
| Switching Energy | 4.4mJ (on), 1.4mJ (off) |
| Input Type | Standard |
| Gate Charge | 311 nC |
| Td(on / off) @ 25°C | 118ns/282ns |
| Test Condition | 600V, 50A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 256 ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
Übersicht
Description
The NGTB50N120FL2WG is an insulated-gate bipolar transistor (IGBT) produced by ON Semiconductor, specifically designed for high-power applications. This device combines the high-efficiency and fast-switching characteristics of a MOSFET with the high-current and low-saturation-voltage capabilities of a bipolar transistor. It is structured to handle high voltage and current levels, making it suitable for use in power electronics, such as inverters, motor drives, and power supply circuits.
Key features include a maximum collector current of 50A and a collector-emitter voltage of 1200V, which make it appropriate for demanding environments. It also offers low conduction and switching losses due to its advanced trench field-stop technology. The "FL" in its name indicates that it has a fast switching capability, while the "2WG" suffix denotes that it comes in a TO-247 package, which is a common format for high-power semiconductor devices. This packaging helps with heat dissipation and facilitates easier mounting on a heat sink.
Key features include a maximum collector current of 50A and a collector-emitter voltage of 1200V, which make it appropriate for demanding environments. It also offers low conduction and switching losses due to its advanced trench field-stop technology. The "FL" in its name indicates that it has a fast switching capability, while the "2WG" suffix denotes that it comes in a TO-247 package, which is a common format for high-power semiconductor devices. This packaging helps with heat dissipation and facilitates easier mounting on a heat sink.
Equivalent
The NGTB50N120FL2WG is an IGBT (Insulated Gate Bipolar Transistor) with specific characteristics. Equivalent products may vary by manufacturer but generally include similar IGBT modules with comparable voltage, current ratings, and switching speeds. Some possible equivalents are:
1. Infineon IKQ50N120CH3
2. Mitsubishi CM50DY-12H
3. Vishay IRG4PC50FD
4. STMicroelectronics STGW30NC120HD
Ensure compatibility by checking the datasheets for specific requirements and performance specifications.
1. Infineon IKQ50N120CH3
2. Mitsubishi CM50DY-12H
3. Vishay IRG4PC50FD
4. STMicroelectronics STGW30NC120HD
Ensure compatibility by checking the datasheets for specific requirements and performance specifications.
Features
The NGTB50N120FL2WG is an IGBT (Insulated Gate Bipolar Transistor) with the following features:
1. Voltage and Current Ratings:
- It has a maximum collector-emitter voltage (V_CEO) of 1200V.
- The continuous collector current (I_C) is rated at 50A.
2. Switching Characteristics:
- Designed for fast switching applications, reducing power loss and improving efficiency.
- Low turn-off losses due to its soft recovery free-wheeling diode.
3. Thermal and Packaging:
- It comes in a TO-247 package, which provides good thermal performance.
- The device is designed to handle high power levels with efficient heat dissipation.
4. Efficiency and Performance:
- Offers high efficiency due to optimized conduction and switching performance.
- Provides a good balance between conduction losses and switching losses.
5. Application Areas:
- Suitable for use in motor drives, inverters, and power supply applications where high efficiency and reliability are required.
Overall, the NGTB50N120FL2WG is ideal for high-power applications demanding robust performance and efficiency.
1. Voltage and Current Ratings:
- It has a maximum collector-emitter voltage (V_CEO) of 1200V.
- The continuous collector current (I_C) is rated at 50A.
2. Switching Characteristics:
- Designed for fast switching applications, reducing power loss and improving efficiency.
- Low turn-off losses due to its soft recovery free-wheeling diode.
3. Thermal and Packaging:
- It comes in a TO-247 package, which provides good thermal performance.
- The device is designed to handle high power levels with efficient heat dissipation.
4. Efficiency and Performance:
- Offers high efficiency due to optimized conduction and switching performance.
- Provides a good balance between conduction losses and switching losses.
5. Application Areas:
- Suitable for use in motor drives, inverters, and power supply applications where high efficiency and reliability are required.
Overall, the NGTB50N120FL2WG is ideal for high-power applications demanding robust performance and efficiency.
Pinout
The NGTB50N120FL2WG is an IGBT (Insulated Gate Bipolar Transistor) module. It typically features a three-pin configuration. The pins are as follows:
1. Collector (C): This is the main terminal through which the current enters the IGBT. It is connected to the high-voltage side of the circuit.
2. Gate (G): The gate terminal is used to control the switching of the IGBT. A voltage applied to this terminal allows the device to conduct between the collector and emitter.
3. Emitter (E): The emitter is the terminal through which the current exits the IGBT. It is connected to the low-voltage side of the circuit.
IGBTs like the NGTB50N120FL2WG are used in various applications including power conversion, motor drives, and inverters due to their efficiency and fast switching capabilities. The specific model details, such as voltage and current ratings, should be verified in the datasheet provided by the manufacturer.
1. Collector (C): This is the main terminal through which the current enters the IGBT. It is connected to the high-voltage side of the circuit.
2. Gate (G): The gate terminal is used to control the switching of the IGBT. A voltage applied to this terminal allows the device to conduct between the collector and emitter.
3. Emitter (E): The emitter is the terminal through which the current exits the IGBT. It is connected to the low-voltage side of the circuit.
IGBTs like the NGTB50N120FL2WG are used in various applications including power conversion, motor drives, and inverters due to their efficiency and fast switching capabilities. The specific model details, such as voltage and current ratings, should be verified in the datasheet provided by the manufacturer.
Manufacturer
The NGTB50N120FL2WG is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a company that specializes in semiconductor solutions. It provides a wide range of products, including power and signal management, logic, discrete, and custom devices for various industries such as automotive, industrial, cloud power, and Internet of Things (IoT). The company emphasizes energy-efficient innovations, contributing to the advancement of sustainable electronics and smart technology solutions.
Application
The NGTB50N120FL2WG is an IGBT (Insulated Gate Bipolar Transistor) designed for high-efficiency power management. Its application areas include:
1. Industrial Motor Drives: Used in variable speed drives for efficient motor control.
2. Power Supplies: Suitable for switch-mode power supplies where high efficiency is critical.
3. Renewable Energy Systems: Employed in inverters for solar and wind energy systems.
4. Uninterruptible Power Supplies (UPS): Ensures efficient power conversion and management.
5. Welders: Used in inverter-based welding machines for precise control.
6. Electric Vehicles: Incorporated in power inverters for electric vehicle drivetrains.
Its high voltage and current handling capability, along with fast switching speeds, make it ideal for these applications.
1. Industrial Motor Drives: Used in variable speed drives for efficient motor control.
2. Power Supplies: Suitable for switch-mode power supplies where high efficiency is critical.
3. Renewable Energy Systems: Employed in inverters for solar and wind energy systems.
4. Uninterruptible Power Supplies (UPS): Ensures efficient power conversion and management.
5. Welders: Used in inverter-based welding machines for precise control.
6. Electric Vehicles: Incorporated in power inverters for electric vehicle drivetrains.
Its high voltage and current handling capability, along with fast switching speeds, make it ideal for these applications.
Package
The NGTB50N120FL2WG is an IGBT (Insulated Gate Bipolar Transistor) in a TO-247 package. TO-247 is a type of power semiconductor package designed to accommodate high power and high voltage components, providing a robust structure for thermal management and electrical connections.
