NJVMJD253T4G

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NJVMJD253T4G

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TRANS PNP 100V 4A DPAK

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Attribut Wert
Part Status Active
Current - Collector (Ic) (Max) 4 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 200mA, 1V
Power - Max 1.4 W
Frequency - Transition 40MHz
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Grade Automotive
Qualification AEC-Q101

Übersicht

Description

NJVMJD253T4G appears to be a unique identifier or code rather than a widely recognized term or acronym. Without specific context, it could represent anything from a product serial number, a project code, or a placeholder for some data. If it pertains to a specific field, such as technology, business, or academia, it might be used internally within an organization or a system.
To provide a meaningful introduction, more context or details would be necessary. If this code is related to a specific project or product, the introduction should include its purpose, scope, and significance. For instance, if NJVMJD253T4G is a project name, the introduction might cover the project's objectives, timeline, and expected outcomes. If it is a product, an introduction could touch on its features, target market, and benefits.
If you can provide additional information or context, I would be glad to offer a more detailed and precise introduction.

Equivalent

The NJVMJD253T4G is a PNP bipolar junction transistor typically used for amplification and switching. Equivalent products include:
1. MJD253 by ON Semiconductor
2. TIP42 series (TIP42A, TIP42B, TIP42C) by STMicroelectronics or its equivalents from other manufacturers
3. 2N5195 from various manufacturers
Always check the datasheets to ensure the electrical characteristics and package types match your requirements.

Features

The NJVMJD253T4G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used for switching and amplifying electronic signals in various applications. Here are some of its key features:
1. Voltage and Current Ratings: It typically has a high breakdown voltage and can handle significant current, making it suitable for power applications.
2. Low On-Resistance: This feature allows for efficient current flow with minimal power loss, improving overall system efficiency.
3. Fast Switching Speed: The transistor can switch on and off quickly, which is beneficial for high-speed applications.
4. Thermal Performance: Often comes with good thermal management capabilities, allowing it to operate effectively under high power conditions.
5. Rugged Design: Built to withstand harsh environments and provide reliable performance over time.
6. Applications: Commonly used in power management systems, motor drives, and other high-efficiency applications.
7. Package Type: Available in various package styles to suit different board layouts and thermal requirements.
These features make the NJVMJD253T4G a versatile component in electronic circuit design.

Pinout

The NJVMJD253T4G is a power transistor manufactured by ON Semiconductor. It is a bipolar junction transistor (BJT) designed for high-current and high-voltage applications. The device is typically used in power amplification and switching applications.
Regarding its package and pin count, the NJVMJD253T4G is commonly provided in a DPAK (TO-252) package, which generally includes three pins:
1. Collector: This is the pin through which the main current flows into the transistor. It's connected to the drain in MOSFET terminology.
2. Base: This pin is used to control the current flowing between the collector and emitter. Small current input here allows larger current flow between the collector and emitter.
3. Emitter: This is the pin through which the current exits the transistor.
These three pins facilitate the transistor's operation by controlling the flow of electrical power, making it suitable for use in power management and signal amplification applications.

Manufacturer

The NJVMJD253T4G is manufactured by ON Semiconductor, which is now known as onsemi. onsemi is a semiconductor supplier company that designs and manufactures a wide range of semiconductor components. These components are used in various applications, including automotive, industrial, cloud power, and Internet of Things (IoT) solutions. onsemi specializes in providing advanced power management, analog, sensor, logic, timing, connectivity, discrete, SoC, and custom devices, with a focus on energy-efficient innovations. The company plays a significant role in the electronics supply chain, serving a global customer base with its high-performance technologies.

Application

The NJVMJD253T4G is a silicon carbide (SiC) MOSFET, known for its high efficiency and fast switching capabilities. It is commonly used in power electronics applications requiring high voltage and current handling capabilities. Key application areas include electric vehicle powertrains, renewable energy systems like solar inverters, industrial motor drives, and power supplies in telecommunications infrastructure. Its high thermal conductivity and low energy loss make it ideal for applications demanding compact design and high-performance efficiency.

Package

The NJVMJD253T4G refers to a specific component from ON Semiconductor, typically a power MOSFET. The package type for this component is DPAK (TO-252), which is a surface-mount package commonly used for such devices, offering good thermal performance and a smaller footprint on PCBs compared to through-hole alternatives.

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