NP100P06PDG-E1-AY

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NP100P06PDG-E1-AY

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MOSFET P-CH 60V 100A TO263

  • HerstellerRenesas Electronics Corporation

  • Herstellerteil #NP100P06PDG-E1-AY

  • Auf Lager5611

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Attribut Wert
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 300 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 15000 pF @ 10 V
Power Dissipation (Max) 1.8W (Ta), 200W (Tc)
Operating Temperature 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package TO-263
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number NP100P06

Übersicht

Description

The NP100P06PDG-E1-AY is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications. It features a low on-resistance, enabling efficient power management and reduced heat generation. This component is typically used in switching applications, power supplies, and motor control due to its ability to handle high currents and voltages.
Key specifications often include a maximum drain-source voltage (V_DS), a maximum continuous drain current (I_D), and a low gate threshold voltage (V_GS(th)). The NP100P06PDG-E1-AY is packaged in a surface-mount format, making it suitable for compact designs.
Engineered for reliability and performance, it supports fast switching times, enhancing overall circuit efficiency. When selecting this MOSFET for a project, it's essential to consider parameters like thermal management, gate drive requirements, and the specific application demands to optimize performance.

Equivalent

The NP100P06PDG-E1-AY is a N-channel MOSFET. Equivalent products include the IRF3205, STP75NF75, and FQP75N06. Ensure to verify the specifications like voltage, current, and R_DS(on) for compatibility in specific applications.

Features

The NP100P06PDG-E1-AY is a high-performance N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of around 60V, making it suitable for medium-voltage applications.
2. Current Rating: This MOSFET can handle continuous drain currents of up to approximately 100A, depending on the thermal management and application conditions.
3. Low R_DS(on): It features a low on-state resistance, enhancing efficiency and reducing power loss during operation.
4. Fast Switching Speed: This attribute contributes to improved performance in high-frequency applications.
5. Thermal Stability: Designed to operate effectively in various thermal environments, it often includes a robust package for better heat dissipation.
6. Gate Threshold Voltage (V_GS(th)): Typically low, facilitating easy drive capability.
These features make the NP100P06PDG-E1-AY ideal for applications in power supplies, motor drives, and other switching power applications. Always consult the datasheet for specific electrical characteristics and ratings.

Pinout

The NP100P06PDG-E1-AY is a power MOSFET with a total of 6 pins. Its primary function is to serve as a high-speed switching device in various applications, including power management and conversion circuits.
The pin configuration typically includes:
1. Gate (G) - Controls the operation of the MOSFET.
2. Drain (D) - The terminal through which the current flows out of the MOSFET.
3. Source (S) - The terminal through which the current enters the MOSFET.
The additional pins may include options for heat dissipation or protection features, depending on the specific package design. This MOSFET is optimized for low on-resistance and fast switching speeds, making it suitable for use in power supplies, converters, and motor control applications.
For exact pin assignments and specifications, it is recommended to consult the manufacturer's datasheet for detailed information.

Manufacturer

The NP100P06PDG-E1-AY is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in providing a broad range of semiconductor solutions, including power management, analog, sensors, logic, timing, and discrete components. The company focuses on energy-efficient innovations and technologies to support various applications in automotive, industrial, communications, computing, and consumer electronics markets.
Headquartered in Phoenix, Arizona, ON Semiconductor has a strong commitment to sustainability and aims to deliver high-performance products while minimizing environmental impact. The company serves a diverse clientele and is known for its extensive portfolio of semiconductor products that cater to the evolving needs of the electronics industry.

Application

The NP100P06PDG-E1-AY is an N-channel MOSFET designed for various applications in power management. Key application areas include DC-DC converters, motor control, power switching, and load management in portable devices. It is suitable for use in power supplies, automotive electronics, and energy-efficient systems due to its low on-resistance and high-speed switching capabilities. Additionally, it can be used in telecommunications and industrial automation for efficient power handling and thermal management.

Package

The NP100P06PDG-E1-AY is packaged in a TO-220 package type. This package is commonly used for power devices, providing efficient thermal management and easy mounting to heatsinks.

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