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NSR0230P2T5G
+StücklisteDIODE SCHOTTKY 30V 200MA SOD923
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HerstellerOnsemi
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Herstellerteil #NSR0230P2T5G
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Datenblatt NSR0230P2T5G DataSheet
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Spezifikationen
| Attribut | Wert |
| Part Status | Active |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Current - Average Rectified (Io) | 200mA |
| Voltage - Forward (Vf) (Max) @ If | 500 mV @ 200 mA |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Current - Reverse Leakage @ Vr | 10 µA @ 10 V |
| Mounting Type | Surface Mount |
| Package / Case | SOD-923 |
| Supplier Device Package | SOD-923 |
| Operating Temperature - Junction | -55°C ~ 125°C |
| Base Product Number | NSR0230 |
Übersicht
Description
The MOSFET supports a wide range of voltage and current ratings, making it suitable for diverse electronic circuits. Its compact package facilitates integration into space-constrained designs. The device also has built-in thermal protection features, providing additional reliability and safety in operation.
With its robust specifications, NSR0230P2T5G is ideal for engineers seeking reliable and efficient components for modern electronic designs.
Equivalent
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 20A, enabling it to manage significant loads.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 23 mΩ, which minimizes power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1V to 3V, allowing for easy driving with low voltage levels.
5. Package Type: It comes in a compact TO-220 package, facilitating efficient thermal dissipation.
6. Fast Switching: The device supports high-speed switching capabilities, making it ideal for applications in power management, motor drives, and DC-DC converters.
These features make the NSR0230P2T5G a versatile choice for various electronic applications requiring reliable performance and efficiency.
Pinout
1. Gate (G): This pin controls the MOSFET's operation, allowing it to turn on or off by applying a voltage.
2. Drain (D): The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S): This pin is the terminal through which the current exits when the MOSFET is conducting.
The NSR0230P2T5G is designed for low on-resistance and fast switching applications, making it suitable for power management and switching applications in electronic circuits.
Manufacturer
Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor has grown through both organic development and strategic acquisitions. It emphasizes sustainability and innovation, providing solutions that help reduce energy consumption and improve performance in electronic devices. The NSR0230P2T5G itself is a low-voltage, high-speed N-channel MOSFET (metal-oxide-semiconductor field-effect transistor), often used in various applications such as power management and switching.
In summary, ON Semiconductor is a key player in the semiconductor industry, offering a diverse range of products aimed at enhancing energy efficiency and performance across multiple sectors.