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NST65010MW6T1G
+StücklisteTRANS 2PNP 65V 100MA SC88/SC70
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HerstellerOnsemi
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Herstellerteil #NST65010MW6T1G
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Datenblatt NST65010MW6T1G DataSheet
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Auf Lager3649
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Spezifikationen
| Attribut | Wert |
| Part Status | Active |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Base Product Number | NST65010 |
| Transistor Type | 2 PNP (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (h FE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
| Power - Max | 380mW |
| Frequency - Transition | 100MHz |
Übersicht
Description
Key features include low on-resistance (Rds(on)), which minimizes power loss and improves efficiency, and fast switching speeds that enhance overall system performance. The device is housed in a TO-220 package, facilitating efficient thermal management and easy mounting on heat sinks.
The NST65010MW6T1G is optimized for high-frequency operation, making it ideal for applications requiring rapid switching. Its robust construction and high reliability ensure long-term performance in demanding environments. Overall, it is a versatile component for engineers looking to optimize power delivery systems in consumer electronics, automotive, and industrial applications.
Equivalent
Features
- Drain-Source Voltage (V_DS): 100V, allowing for use in high-voltage applications.
- Continuous Drain Current (I_D): 65A, providing robust performance in power delivery.
- R_DS(on): Low on-resistance of approximately 10 mΩ (at V_GS = 10V), ensuring minimal power loss during operation.
- Gate Threshold Voltage (V_GS(th)): Typically between 2-4V, enabling easy drive with standard logic levels.
- Fast Switching Speed: Suitable for high-frequency applications, enhancing efficiency.
- Package Type: Available in a TO-220 or DPAK format for versatile mounting options.
- Thermal Resistance: Good thermal performance for reliable operation in various environments.
These features make the NST65010MW6T1G ideal for use in power supplies, motor drives, and other applications requiring efficient power conversion and management.
Pinout
1. Gate (G): Controls the switching of the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): The output where the load is connected. Current flows from the drain to the source when the MOSFET is on.
3. Source (S): The terminal through which current exits the device when it is conducting.
The pin configuration allows for efficient management of power in applications such as motor control, power supplies, and other electronic circuits. The NST65010MW6T1G is valued for its low on-resistance and fast switching speed, making it suitable for various electronic and power management applications.
Manufacturer
Application
1. DC-DC Converters: For efficient voltage regulation in power supplies.
2. Switching Power Supplies: To enhance efficiency in industrial and consumer electronics.
3. Motor Drives: In controlling electric motors for various applications.
4. LED Drivers: For managing power in LED lighting systems.
5. Battery Management Systems: Ensuring safe and efficient charging and discharging.
Overall, it is suitable for data centers, telecommunications, automotive applications, and renewable energy systems.