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NSV60600MZ4T1G
+StücklisteTRANS PNP 60V 6A SOT223
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Herstellerteil #NSV60600MZ4T1G
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Spezifikationen
| Attribut | Wert |
| Part Status | Active |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 600mA, 6A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (h FE) (Min) @ Ic, Vce | 120 @ 1A, 2V |
| Power - Max | 800 mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | SOT-223 (TO-261) |
| Base Product Number | NSV60600 |
Übersicht
Description
The NSV60600MZ4T1G is a high-performance N-channel MOSFET designed for power management applications. It features a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) rating of up to 50A, making it suitable for various switching and amplification tasks in power converters, motor drivers, and other high-efficiency circuits.
With a low on-resistance (R_DS(on)), the NSV60600MZ4T1G minimizes conduction losses, enhancing overall system efficiency. It showcases fast switching speeds, which are beneficial for high-frequency applications. The device comes in a compact, surface-mount SO-8 package, making it easy to integrate into space-constrained designs.
The MOSFET is also designed to endure high thermal loads, with a high-temperature operating range, which ensures reliable performance in demanding environments. Additionally, it is RoHS-compliant, aligning with environmental regulations for electronic components. Overall, the NSV60600MZ4T1G is an effective choice for engineers seeking robust and efficient power solutions.
With a low on-resistance (R_DS(on)), the NSV60600MZ4T1G minimizes conduction losses, enhancing overall system efficiency. It showcases fast switching speeds, which are beneficial for high-frequency applications. The device comes in a compact, surface-mount SO-8 package, making it easy to integrate into space-constrained designs.
The MOSFET is also designed to endure high thermal loads, with a high-temperature operating range, which ensures reliable performance in demanding environments. Additionally, it is RoHS-compliant, aligning with environmental regulations for electronic components. Overall, the NSV60600MZ4T1G is an effective choice for engineers seeking robust and efficient power solutions.
Equivalent
The NSV60600MZ4T1G is a low-voltage, N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and BS170. When looking for alternatives, consider parameters like V_DS, I_D, R_DS(on), and gate threshold voltage to ensure compatibility. Always consult the datasheets for precise specifications.
Features
The NSV60600MZ4T1G is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various power management tasks.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 60A, allowing it to manage significant loads.
3. R_DS(on): It offers a low on-resistance (R_DS(on)), typically around 15 mΩ, ensuring efficient power delivery and minimal heat generation during operation.
4. Fast Switching: The MOSFET supports rapid switching speeds, which enhances the efficiency of switching power supplies and converters.
5. Package: It comes in a compact surface-mount package (SOT-223), facilitating easy integration into space-constrained designs.
6. Thermal Performance: The part includes good thermal characteristics, allowing for robust operation in demanding environments.
These features make the NSV60600MZ4T1G ideal for applications in power management, motor control, and automotive systems.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various power management tasks.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 60A, allowing it to manage significant loads.
3. R_DS(on): It offers a low on-resistance (R_DS(on)), typically around 15 mΩ, ensuring efficient power delivery and minimal heat generation during operation.
4. Fast Switching: The MOSFET supports rapid switching speeds, which enhances the efficiency of switching power supplies and converters.
5. Package: It comes in a compact surface-mount package (SOT-223), facilitating easy integration into space-constrained designs.
6. Thermal Performance: The part includes good thermal characteristics, allowing for robust operation in demanding environments.
These features make the NSV60600MZ4T1G ideal for applications in power management, motor control, and automotive systems.
Pinout
The NSV60600MZ4T1G is a N-channel MOSFET with a pin count of 4. Its primary functions include high-speed switching applications and low on-resistance, making it suitable for power management in various electronic devices.
The pins are typically designated as follows:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - Connects to the load; carries the output current.
3. Source (S) - Connects to ground or the negative side of the power supply.
4. Body (B) - Internal connection; typically not used externally.
This component is commonly used in applications requiring efficient power regulation and management.
The pins are typically designated as follows:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - Connects to the load; carries the output current.
3. Source (S) - Connects to ground or the negative side of the power supply.
4. Body (B) - Internal connection; typically not used externally.
This component is commonly used in applications requiring efficient power regulation and management.
Manufacturer
The NSV60600MZ4T1G is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in designing and manufacturing a wide range of semiconductor solutions, including power management, analog, and digital ICs. They serve various markets such as automotive, industrial, communications, and consumer electronics.
Founded in 1999 and based in Phoenix, Arizona, ON Semiconductor focuses on energy-efficient technologies and innovations that facilitate the transition to a sustainable future. The company provides a comprehensive portfolio of products aimed at enabling applications in the rapidly evolving tech landscape. They are known for their commitment to quality and sustainability and have established a significant presence in the semiconductor industry.
Founded in 1999 and based in Phoenix, Arizona, ON Semiconductor focuses on energy-efficient technologies and innovations that facilitate the transition to a sustainable future. The company provides a comprehensive portfolio of products aimed at enabling applications in the rapidly evolving tech landscape. They are known for their commitment to quality and sustainability and have established a significant presence in the semiconductor industry.
Application
The NSV60600MZ4T1G is a low-voltage N-channel MOSFET primarily used in applications such as power management, DC-DC converters, and battery management systems. Its features make it suitable for synchronous rectification, motor drives, and lighting control circuits. Additionally, it can be employed in consumer electronics and automotive applications for efficient switching and power efficiency.
Package
The NSV60600MZ4T1G is packaged in a SOT-23-5 (Surface-Mount) type package.
