NT5CC256M8JQ-EK

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NT5CC256M8JQ-EK

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1.283V~1.45V 2Gbit 933MHz DDR3 SDRAM Memory (ICs) RoHS

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Spezifikationen

Attribut Wert
ClockFrequency 933MHz
MemoryFormat DDR3 SDRAM
MemorySize 2Gbit
Operatingtemperature 0℃~+95℃
Voltage-Supply 1.283V~1.45V

Übersicht

Description

The NT5CC256M8JQ-EK is a DDR3 (Double Data Rate 3) SDRAM chip, commonly used in computing devices for temporary data storage and quick data retrieval. It offers a 256 Megabit density organized as 32M x 8 bits, delivering efficient memory performance suitable for a range of applications including PCs, servers, and consumer electronics.
Key features of the NT5CC256M8JQ-EK include ease of integration into memory modules due to its standardized architecture, low power consumption compared to its predecessors, and high data transfer rates, which enhance system performance. The DDR3 technology enables the chip to double the data rate of DDR2 while maintaining lower voltage requirements, which is crucial for energy-efficient operation.
This memory chip is designed to operate effectively at various clock speeds and supports features like on-die termination and dynamic on-die termination. The NT5CC256M8JQ-EK is ideal for applications requiring reliable and efficient memory performance, contributing to the overall speed and responsiveness of the system it is implemented in.

Equivalent

The NT5CC256M8JQ-EK chip is a DDR3 SDRAM memory chip by Nanya. Equivalent products may include:
1. Samsung K4B2G0846D
2. Hynix H5TQ2G83CFR
3. Micron MT41J256M8HX
4. Kingston D2516EC4BXGJD
These equivalents are based on similar specifications like density, form factor, and performance characteristics. However, always verify compatibility with the specific requirements of your application or system.

Features

The NT5CC256M8JQ-EK is a DRAM component designed for high-performance memory applications. Key features include:
1. Capacity: 2Gb (Gigabit).
2. Type: DDR3 SDRAM (Synchronous Dynamic Random-Access Memory).
3. Data Rate: Supports data rates up to 1600 MT/s (Megatransfers per second).
4. Voltage: Operates at a low voltage of 1.35V to 1.5V, enhancing energy efficiency.
5. Organization: Configured as 256M x 8, offering wide data paths for faster processing.
6. Package: Available in a standard 78-ball FBGA (Fine-Pitch Ball Grid Array) package, optimizing space and enabling better electrical performance.
7. Temperature Range: Suitable for commercial temperature ranges, typically 0°C to 95°C.
8. Compatibility: Designed for compatibility with a wide range of computing and electronic devices.
9. Reliability: Implements Error Correction Code (ECC) for increased data integrity.
These features make the NT5CC256M8JQ-EK suitable for various applications requiring reliable and efficient memory performance, including computing and networking solutions.

Pinout

The NT5CC256M8JQ-EK is a DDR3 SDRAM chip manufactured by Nanya Technology. It features a 2Gb (gigabit) density organized as 256M x 8 bits. The chip comes in a 78-ball FBGA (Fine-Pitch Ball Grid Array) package.
The primary function of this memory chip is to provide high-speed data storage and retrieval for digital systems, often used in computers, servers, and other electronic devices requiring fast and efficient memory functionality. It supports a clock frequency of up to 1600 MHz, making it suitable for a range of high-performance applications.
The pin configuration includes pins for power, ground, data input/output, address inputs, and control signals, necessary for operation within a memory subsystem. Each pin serves a specific role, from transmitting data to ensuring proper communication and power management within the device.

Manufacturer

The NT5CC256M8JQ-EK is manufactured by Nanya Technology Corporation. Nanya is a Taiwanese company that specializes in the design, development, and manufacturing of dynamic random-access memory (DRAM) products. It is one of the leading DRAM manufacturers globally and provides a variety of memory solutions for different applications, including consumer electronics, computers, and mobile devices. The company focuses on delivering high-performance memory solutions and is an integral part of the global semiconductor supply chain.

Application

The NT5CC256M8JQ-EK is a DDR3 DRAM chip used primarily in applications requiring high-speed data processing and efficient memory management. Its common application areas include computing devices like PCs and laptops, networking equipment, and consumer electronics such as gaming consoles and smart TVs. Additionally, it's used in embedded systems for automotive infotainment, industrial automation, and telecommunications infrastructure. This DRAM chip is ideal for systems that demand reliable and fast memory solutions to handle large data volumes and high-performance tasks.

Package

The NT5CC256M8JQ-EK is a DDR3 DRAM chip typically packaged in a 78-ball FBGA (Fine-pitch Ball Grid Array). This packaging helps in providing a compact and efficient connection interface, suitable for high-performance memory applications.

Frequently Asked Questions


Q: What is the memory density and organization of the NT5CC256M8JQ-EK?
A: It is a 2Gbit DDR3 SDRAM organized as 256M x 8, suitable for applications requiring high-density memory.


Q: What is the maximum operating frequency of this DDR3 memory?
A: The device supports a clock frequency of 933MHz, equivalent to DDR3-1866 data rate for high-speed data transfer.


Q: What is the recommended operating voltage range for this component?
A: The supply voltage range is 1.283V to 1.45V, compliant with standard DDR3L (low voltage) specifications.


Q: Can it operate in high-temperature environments?
A: Yes, with an operating temperature range of 0°C to +95°C, it is suitable for industrial or extended-temperature applications.


Q: Is this memory compatible with DDR3L systems?
A: Yes, the 1.283V to 1.45V supply voltage range ensures full compatibility with 1.35V DDR3L platforms, offering power savings.


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