NTGD4167CT1G

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NTGD4167CT1G

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MOSFET N/P-CH 30V 2.6/1.9A 6TSOP

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Attribut Wert
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N and P-Channel
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 30V
Current-ContinuousDrain(Id)@25°C 2.6A, 1.9A
RdsOn(Max)@IdVgs 90mOhm @ 2.6A, 4.5V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 5.5nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds 295pF @ 15V
Power-Max 900mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case SOT-23-6 Thin, TSOT-23-6

Übersicht

Description

NTGD4167CT1G is likely a part number or model number for a specific electronic component, possibly a semiconductor device such as a transistor, diode, or integrated circuit. The prefix "NTGD" suggests it may be manufactured by ON Semiconductor or a similar company. The specific characteristics of NTGD4167CT1G would include its electrical specifications like voltage, current, power ratings, and package type, among others. Understanding these parameters is crucial for engineers and designers to ensure the component is suitable for their particular application. Typical applications might include power management, signal processing, or switching in various electronic circuits. For detailed specifications, applications, and handling guidelines, consulting the manufacturer's datasheet is recommended. This document would provide essential information such as pin configurations, electrical characteristics, thermal performance, and application notes, ensuring proper integration into electronic designs.

Equivalent

The NTGD4167CT1G is a dual N-channel MOSFET. Equivalent products could include similar dual N-channel MOSFETs from other manufacturers, such as the Vishay SiB710DK, Fairchild FDG6326N, or the Infineon BSS123N. Ensure that the electrical characteristics such as voltage, current rating, and package type match your requirements when selecting an equivalent. Always consult the datasheets for compatibility.

Features

The NTGD4167CT1G is a dual N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic applications for switching and amplification purposes. Key features include:
1. Dual N-Channel Configuration: It contains two N-channel MOSFETs in a single package, suitable for compact circuits.
2. Low On-Resistance: Offers low on-state resistance, ensuring efficient current flow and minimal power loss.
3. Fast Switching Speed: Designed for high-speed operation, making it suitable for applications requiring rapid switching.
4. Compact Package: Typically housed in a small SOT-563 package, saving space in PCB layouts.
5. High Power Handling: Capable of handling significant amounts of current and voltage, suitable for various load conditions.
6. Thermal Efficiency: Designed for effective thermal management, ensuring reliable performance under different temperature conditions.
7. RoHS Compliant: Meets environmental standards, being free from hazardous substances.
These features make the NTGD4167CT1G ideal for use in power management, load switching, and other electronic circuit applications requiring efficient, compact, and reliable MOSFET solutions.

Pinout

The NTGD4167CT1G is a dual N-channel MOSFET produced by ON Semiconductor. It is mainly used for applications requiring efficient switching in a compact form. The device is housed in a small, surface-mount SC-88 package.
The NTGD4167CT1G has a total of 6 pins. Here is a brief overview of the pin functions:
1. Pin 1 (Drain1 - D1): The drain terminal for the first MOSFET.
2. Pin 2 (Source1 - S1): The source terminal for the first MOSFET.
3. Pin 3 (Gate1 - G1): The gate terminal for the first MOSFET.
4. Pin 4 (Gate2 - G2): The gate terminal for the second MOSFET.
5. Pin 5 (Source2 - S2): The source terminal for the second MOSFET.
6. Pin 6 (Drain2 - D2): The drain terminal for the second MOSFET.
This device is typically used in DC-DC converters, load switches, and other power management applications due to its low on-resistance and fast switching capabilities.

Manufacturer

The NTGD4167CT1G is manufactured by ON Semiconductor, a company specializing in semiconductor manufacturing. ON Semiconductor, now known as onsemi, provides a wide range of products, including power and signal management, logic, discrete, and custom devices for automotive, communications, computing, consumer, industrial, medical, and military/aerospace applications. The company focuses on energy-efficient innovations and supplies components that are integral to electronics systems, supporting various industries with cutting-edge semiconductor solutions.

Application

The NTGD4167CT1G is a dual N-channel MOSFET commonly used in various electronic applications due to its compact size and efficient power handling. Key application areas include:
1. Power Management: Used in DC-DC converters and voltage regulation for efficient power distribution.
2. Load Switching: Ideal for switching applications in portable devices, enabling controlled power delivery.
3. Battery Protection: Provides overcurrent protection in battery-operated gadgets.
4. Motor Control: Utilized in driving small motors for precision control in robotics and automation.
5. Signal Switching: Employed in low-voltage switching tasks in communication devices.
Overall, this component is selected for designs requiring high efficiency and compact form factor.

Package

The NTGD4167CT1G is a MOSFET transistor and is typically packaged in a SOT-563 (Small Outline Transistor) package. This package is characterized by its small size, making it suitable for space-constrained applications.

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