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NTK3139PT1G
+StücklisteMOSFET P-CH 20V 660MA SOT723
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HerstellerOnsemi
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Herstellerteil #NTK3139PT1G
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Paket SOT-723-3
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Auf Lager4141
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 660mA (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 1.5V, 4.5V |
| Rds On(Max) @ Id Vgs | 480mOhm @ 780mA, 4.5V |
| Vgs(th)(Max) @ Id | 1.2V @ 250µA |
| Vgs(Max) | ±6V |
| Input Capacitance(Ciss)(Max) @ Vds | 170 pF @ 16 V |
| Power Dissipation (Max) | 310mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-723 |
Übersicht
Description
The NTK3139PT1G is a semiconductor component, specifically a transistor, manufactured by ON Semiconductor. It is designed for high-frequency applications, often used in wireless communication systems and RF amplification. The device is encapsulated in a small, surface-mount package, making it suitable for compact designs.
Key features of the NTK3139PT1G include low noise figure, high gain, and good linearity, which are critical for maintaining signal integrity in high-frequency circuits. It typically operates at a frequency range suitable for RF applications, providing efficient performance in demanding environments.
The transistor's specifications also highlight its ability to handle moderate power levels, making it versatile for various applications, including amplifiers, mixers, and oscillators in communication devices. It is a reliable choice for engineers looking to integrate efficient RF components into their designs.
Overall, the NTK3139PT1G is valued for its robust performance, small form factor, and compatibility with high-frequency applications, contributing to its widespread use in the electronics industry.
Key features of the NTK3139PT1G include low noise figure, high gain, and good linearity, which are critical for maintaining signal integrity in high-frequency circuits. It typically operates at a frequency range suitable for RF applications, providing efficient performance in demanding environments.
The transistor's specifications also highlight its ability to handle moderate power levels, making it versatile for various applications, including amplifiers, mixers, and oscillators in communication devices. It is a reliable choice for engineers looking to integrate efficient RF components into their designs.
Overall, the NTK3139PT1G is valued for its robust performance, small form factor, and compatibility with high-frequency applications, contributing to its widespread use in the electronics industry.
Equivalent
The NTK3139PT1G is a MOSFET used for switching applications. Equivalent products would be similar N-channel MOSFETs with comparable voltage and current ratings, such as the 2N7002, BSS138, or SSM3K7002 series from other manufacturers. Always check the datasheets for specific parameter matching to ensure compatibility.
Features
The NTK3139PT1G is a N-channel MOSFET designed for efficient power management and switching applications. Key features include:
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 6A, making it suitable for moderate power applications.
2. Low On-Resistance: The MOSFET features a low R_DS(on), enhancing efficiency by minimizing power loss during operation.
3. Package Type: It is available in a compact SOT-23 package, which is ideal for space-constrained applications and helps in achieving efficient thermal performance.
4. Enhancement Mode: The device operates in enhancement mode, requiring a positive gate-source voltage (V_GS) to conduct, ensuring low power consumption in standby modes.
5. Fast Switching: The NTK3139PT1G is designed for fast switching speeds, suitable for high-speed switching applications, which helps in improving the overall performance of the circuit.
6. Thermal Performance: The package and design allow for effective heat dissipation, ensuring reliable operation under varying thermal conditions.
These features make the NTK3139PT1G a versatile choice for applications requiring efficient power switching and management.
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 6A, making it suitable for moderate power applications.
2. Low On-Resistance: The MOSFET features a low R_DS(on), enhancing efficiency by minimizing power loss during operation.
3. Package Type: It is available in a compact SOT-23 package, which is ideal for space-constrained applications and helps in achieving efficient thermal performance.
4. Enhancement Mode: The device operates in enhancement mode, requiring a positive gate-source voltage (V_GS) to conduct, ensuring low power consumption in standby modes.
5. Fast Switching: The NTK3139PT1G is designed for fast switching speeds, suitable for high-speed switching applications, which helps in improving the overall performance of the circuit.
6. Thermal Performance: The package and design allow for effective heat dissipation, ensuring reliable operation under varying thermal conditions.
These features make the NTK3139PT1G a versatile choice for applications requiring efficient power switching and management.
Manufacturer
The NTK3139PT1G is manufactured by ON Semiconductor, a company that specializes in designing and producing semiconductors and electronic components. ON Semiconductor, now known as onsemi, is headquartered in Phoenix, Arizona, and operates globally. The company provides a wide range of products including power and signal management, logic, discrete, and custom devices for automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace, and power applications. They focus on energy-efficient innovations, aiming to drive technology solutions for a more sustainable future.
Application
The NTK3139PT1G is a N-channel MOSFET, which is commonly used in various applications due to its efficiency and reliability. Key application areas include power management systems, DC-DC converters, load switches, and motor control circuits. It is also employed in battery-powered devices and portable electronics due to its low on-resistance and fast switching capabilities. Additionally, this MOSFET is suitable for telecommunications, automotive, and industrial applications where efficient power control and management are critical.
Package
The NTK3139PT1G typically comes in a Surface Mount Device (SMD) package, specifically a SC-75/SOT-416. This is a small-outline transistor package used for mounting on printed circuit boards, offering a compact design suitable for space-constrained applications.
