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NTMFS4C08NT1G
+StücklisteMOSFET N-CH 30V 9A/52A 5DFN
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HerstellerOnsemi
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Herstellerteil #NTMFS4C08NT1G
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Datenblatt NTMFS4C08NT1G DataSheet
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Auf Lager11734
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Spezifikationen
| Attribut | Wert |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 9A (Ta), 52A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 5.8mOhm @ 18A, 10V |
| Vgs(th)(Max) @ Id | 2.1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 18.2 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1113 pF @ 15 V |
| Power Dissipation (Max) | 760mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Übersicht
Description
To get an introduction or detailed information about this component, you would generally refer to its datasheet. Datasheets provide comprehensive details such as electrical characteristics, thermal performance, pin configurations, and typical applications. They are essential for engineers and technicians to ensure the component meets the requirements of their specific applications.
For precise specifications and applications, you would need to look up the datasheet on the official onsemi website or through authorized distributors. This will provide technical insights and ensure compatibility with your project's needs.
Equivalent
1. Infineon BSC030N04LS
2. Vishay SiRA20DP
3. ON Semiconductor NTD5804N
It's essential to compare specific parameters such as Rds(on), Vgs, and package specifications to ensure compatibility. Always refer to the datasheets for detailed comparison.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
2. Current Capacity: The device can handle a continuous drain current (I_D) of up to approximately 60A under specific conditions, allowing for significant power handling capabilities.
3. R_DS(on): It offers a low on-resistance, typically around 1.8 mΩ, which ensures efficient performance by reducing power losses during operation.
4. Package: The MOSFET is housed in a compact PowerPAK SO-8 package, which provides excellent thermal performance and space-saving advantages for circuit board layouts.
5. Applications: Common applications include DC-DC converters, motor control, and load switching in power management systems.
Overall, the NTMFS4C08NT1G is well-suited for high-efficiency power management in compact electronic designs.
Pinout
1. Pin Count: 8 pins
2. Pin Functions:
- Pins 1, 2, 3: Source (S) - These are connected to the source of the MOSFET.
- Pin 4: Gate (G) - This pin is connected to the gate, which controls the MOSFET's switching operation.
- Pins 5, 6, 7, 8: Drain (D) - These are connected to the drain of the MOSFET.
The NTMFS4C08NT1G is designed for use in high-efficiency switching applications and offers low on-resistance, making it suitable for DC-DC converters and power management in various electronic devices.
Manufacturer
Application
1. Power Management: Utilized in DC-DC converters and power supply circuits for its low on-resistance and fast switching.
2. Motor Control: Employed in motor drivers for controlling speed and direction due to its robust current handling.
3. Automotive Systems: Used in automotive electronics for managing power distribution and load switching.
4. Consumer Electronics: Found in devices requiring efficient power usage, such as laptops and smartphones.
5. Industrial Automation: Integrated in PLCs and robotics for controlling inductive loads.
These applications benefit from its reliability, efficiency, and compact size.