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NTMFS4C302NT1G
+StücklisteMOSFET N-CH 30V 41A/230A 5DFN
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HerstellerOnsemi
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Herstellerteil #NTMFS4C302NT1G
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Paket SO-8
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Auf Lager3173
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 41A (Ta), 230A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 1.15mOhm @ 30A, 10V |
| Vgs(th)(Max) @ Id | 2.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 82 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 5780 pF @ 15 V |
| Power Dissipation (Max) | 3.13W (Ta), 96W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Übersicht
Description
Key features of the NTMFS4C302NT1G may include high efficiency, low on-resistance, and fast switching capabilities, making it suitable for applications requiring efficient power conversion and minimal energy loss. Such components are often utilized in power supplies, motor controllers, and various types of electronic circuits where reliable switching performance is required.
The "NTMFS" indicates the product family, while "4C302NT1G" provides specific details about the model, such as its electrical characteristics and packaging. When selecting a MOSFET like this one, engineers consider factors such as voltage rating, current capacity, and thermal performance to ensure compatibility with their design requirements.
Equivalent
1. Vishay's SiRA90DP
2. Infineon's BSC100N06LS3G
3. STMicroelectronics' STL110N6F7
It's important to verify the specific requirements of your application and consult datasheets to ensure compatibility when selecting an equivalent component.
Features
1. N-Channel Configuration: It is an N-channel MOSFET, ideal for high-speed switching applications.
2. Voltage and Current Ratings: Typically features a drain-source voltage (V_DS) of around 30V and a continuous drain current (I_D) of approximately 60A, making it suitable for medium power applications.
3. Low On-Resistance: Offers low on-resistance (R_DS(on)) which reduces power loss and improves efficiency.
4. Package Type: Comes in a compact, thermally efficient package such as DFN or SO-8, facilitating ease of mounting and better heat dissipation.
5. Enhanced Switching Performance: Designed for fast switching speeds, improving performance in applications like DC-DC converters and motor drives.
6. Thermal Management: Built to handle thermal stresses with superior thermal resistance characteristics.
These features make the NTMFS4C302NT1G a versatile choice for power conversion and management tasks in consumer electronics, computing, and industrial applications.
Pinout
- Pin Count: The device generally has 8 pins.
- Pin Functions:
- Pins 1, 2, 3: Source (S) - These pins are connected together internally and serve as the source terminal of the MOSFET.
- Pin 4: Gate (G) - This pin is used to control the MOSFET turning on or off by applying a voltage.
- Pins 5, 6, 7, 8: Drain (D) - These pins are also internally connected and serve as the drain terminal of the MOSFET.
This pin configuration allows for efficient power handling and is commonly used in power management applications. It is important to refer to the specific datasheet for detailed electrical characteristics and application guidelines.
Manufacturer
Application
1. Power Management: Utilized in DC-DC converters and voltage regulation modules.
2. Automotive Systems: Employed in electric vehicle powertrains and battery management systems.
3. Industrial Equipment: Used in motor drives and robotic controls.
4. Consumer Electronics: Integrated into power supplies and battery-powered devices.
5. Telecommunications: Applied in networking equipment for power delivery and management.
Its design offers low on-resistance and fast switching capabilities, making it suitable for high-efficiency power conversion and management tasks.