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NTMFS5C612NT1G
+StücklisteNFET SO8FL 60V 235A 1.5MO
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HerstellerOnsemi
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Herstellerteil #NTMFS5C612NT1G
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Datenblatt NTMFS5C612NT1G DataSheet
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Auf Lager7562
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Spezifikationen
| Attribut | Wert |
| PartStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 35A (Ta), 230A (Tc) |
| DriveVoltage(MaxRdsOn,MinRdsOn) | 10V |
| RdsOn(Max)@Id,Vgs | 1.6mOhm @ 50A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 60.2 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4830 pF @ 25 V |
| PowerDissipation(Max) | 3.8W (Ta), 170W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 5-DFN (5x6) (8-SOFL) |
| Package/Case | 8-PowerTDFN, 5 Leads |
Übersicht
Description
The key specifications of the NTMFS5C612NT1G include a low on-resistance, which minimizes power loss and enhances efficiency during operation. It is built to handle significant current and voltage levels, making it suitable for various applications such as DC-DC converters, load switches, and other power management circuits.
Additionally, the MOSFET is housed in a compact package that aids in reducing the overall size and weight of electronic devices, improving thermal performance, and facilitating integration into compact circuit boards. Its robust design ensures reliability and longevity in demanding environments.
Equivalent
1. Infineon's BSC123N08NS3 G
2. Vishay's SiRA12BDP
3. Texas Instruments' CSD18510Q5B
4. STMicroelectronics' STL120N10F7
Always verify specific parameters like voltage, current ratings, and package type to ensure compatibility.
Features
1. Technology: Utilizes ON Semiconductor's advanced silicon technology for improved performance.
2. Low On-Resistance: Offers low R_DS(on) to enhance efficiency and reduce power loss.
3. Voltage Rating: Typically operates at a drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
4. Current Handling: Capable of handling significant continuous drain current, which supports high-power applications.
5. Package Type: Provided in a compact PowerPAK package for efficient heat dissipation and space-saving on PCBs.
6. Applications: Ideal for applications such as DC-DC converters, power management for consumer electronics, and other switching applications.
7. Thermal Performance: Designed to manage thermal conditions effectively, supporting reliability in various operating environments.
These features make the NTMFS5C612NT1G a versatile choice for modern power management needs.
Pinout
Regarding the pin count and function:
1. Pin Count: The NTMFS5C612NT1G is housed in a Power56 package, which typically has an 8-pin configuration. However, it primarily utilizes three main connections: the Gate (G), Drain (D), and Source (S).
2. Pin Function:
- Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
- Drain (D): The drain pin is where current enters the MOSFET from the load.
- Source (S): The source pin is where current exits the MOSFET to ground.
This configuration allows the MOSFET to act as a switch or amplifier in electronic circuits.
Manufacturer
Application
1. DC-DC Converters: Used for efficient power conversion in various electronic devices.
2. Load Switching: Suitable for controlling power to various loads in industrial and consumer electronics.
3. Motor Drives: Used in low-to-medium power motor control applications.
4. Power Supplies: Employed in designing efficient power supply units for electronics.
5. Battery Management: Helps in managing power in battery-operated devices.
These applications leverage the MOSFET's efficiency, low on-resistance, and fast switching capabilities.