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NTMFS5C646NLT1G
+StücklisteMOSFET N-CH 60V 19A 5DFN
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HerstellerOnsemi
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Herstellerteil #NTMFS5C646NLT1G
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Paket SO-8
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Auf Lager3861
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 19A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 4.7mOhm @ 50A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 33.7 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 2164 pF @ 25 V |
| Power Dissipation (Max) | 3.7W (Ta), 79W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Übersicht
Description
Key features include:
- N-Channel Configuration: Common for high-side switching.
- Low On-Resistance: Ensures minimal power loss and improved efficiency during operation.
- Enhancement Mode: Requires a positive gate-source voltage to conduct.
- Compact Package: Typically available in a small surface-mount package for efficient use of board space.
Applications might involve DC-DC converters, load switches, and motor drivers. Its reliability and performance are ideal for modern power management systems that demand both efficiency and compactness. The NTMFS5C646NLT1G is often selected for designs where space conservation and power efficiency are critical.
Equivalent
1. Infineon BSC026N04LS - A low-voltage power MOSFET.
2. Vishay SiR640DP - Known for similar Rds(on) and voltage ratings.
3. Texas Instruments CSD17573Q5B - Offers comparable performance.
Always verify specific parameters like Rds(on), Vgs, and current ratings to ensure compatibility for your application.
Features
Key features of the NTMFS5C646NLT1G include:
1. Low On-Resistance: This feature minimizes conduction losses, enhancing overall power efficiency.
2. High-Speed Switching: Allows for rapid transitions between on and off states, improving performance in dynamic applications.
3. Compact Package: Designed for space-constrained environments, facilitating easy integration into electronic circuits.
4. Robust Construction: Ensures reliability and durability in different operating conditions, making it suitable for industrial and consumer electronics.
This MOSFET is typically used in applications such as power management in computers, telecom systems, and other electronic devices requiring efficient power regulation.
Pinout
Key functions of the NTMFS5C646NLT1G include:
1. Low On-Resistance: It features a low RDS(on), which minimizes power loss and increases efficiency.
2. High-Speed Switching: Suitable for applications requiring rapid switching, optimizing performance in power conversion.
3. Thermal Performance: The package is designed to handle thermal dissipation effectively, which is crucial for maintaining reliability over time.
The pin configuration generally follows this pattern for an SO-8 package:
- Pins 1, 2, 3: Source
- Pin 4: Gate
- Pins 5, 6, 7, 8: Drain
This configuration is designed to facilitate easy integration into circuit designs for efficient power switching applications. Always refer to the datasheet for precise information as designs can vary slightly depending on the manufacturer.
Manufacturer
Application
1. DC-DC Converters: Efficient energy conversion in power supply circuits.
2. Motor Control: Used in controlling motors in various electronic devices.
3. Power Management: In computers and consumer electronics for voltage regulation.
4. Load Switching: For switching loads in battery-powered devices.
5. Automotive Systems: In electronic control units (ECUs) for vehicle systems.
6. Telecommunications: Power amplification and switching in communication devices.
These areas benefit from the MOSFET's low on-resistance and fast switching capabilities.