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NTMTSC1D6N10MCTXG
+StücklisteMOSFET N-CH 100V 35A/267A 8TDFNW
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Herstellerteil #NTMTSC1D6N10MCTXG
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Spezifikationen
| Attribut | Wert |
| Part Status | Active |
| Base Product Number | NTMTSC1 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Ta), 267A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 90A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 650µA |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7630 pF @ 50 V |
| Power Dissipation (Max) | 5.1W (Ta), 291W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount, Wettable Flank |
| Supplier Device Package | 8-TDFNW (8.3x8.4) |
| Package / Case | 8-PowerTDFN |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
