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NTR4171PT1G
+StücklisteMOSFET P-CH 30V 2.2A SOT23-3
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HerstellerOnsemi
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Herstellerteil #NTR4171PT1G
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Paket SOT-23-3
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Auf Lager5751
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 2.2A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 10V |
| Rds On(Max) @ Id Vgs | 75mOhm @ 2.2A, 10V |
| Vgs(th)(Max) @ Id | 1.4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 15.6 nC @ 10 V |
| Vgs(Max) | ±12V |
| Input Capacitance(Ciss)(Max) @ Vds | 720 pF @ 15 V |
| Power Dissipation (Max) | 480mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
Übersicht
Description
If it is part of a university program, the course might cover in-depth concepts in a particular discipline, possibly including lectures, practical sessions, and assessments designed to enhance understanding and skills in that area. Students might engage with both theoretical frameworks and practical applications to gain a comprehensive understanding of the subject.
For precise details, including the course description, objectives, syllabus, and prerequisites, one should consult the specific academic institution's course catalog or contact the relevant department offering the course.
Equivalent
1. 2N7002 Series (e.g., 2N7002, 2N7002K - from various manufacturers.
2. BSS138- from various manufacturers.
3. DMN65D8L-7- by Diodes Incorporated.
4. IRLML6346TRPBF- by Infineon Technologies.
When selecting equivalents, verify key specifications like voltage, current, Rds(on), and package to ensure compatibility.
Features
1. Type: N-Channel MOSFET
2. Drain-Source Voltage (V_DS): Typically rated for around 30V.
3. Continuous Drain Current (I_D): It supports currents up to approximately 1.2A.
4. R_DS(on): Low on-state resistance, enhancing efficiency, typically less than 0.25 ohms.
5. Package: Comes in a compact SOT-23 package ideal for space-constrained applications.
6. Gate Threshold Voltage (V_GS(th)): Typically around 1-2V, allowing for easy interfacing with low-voltage logic.
7. Fast Switching Speed: Suitable for high-speed switching applications.
8. Temperature Range: It operates across a broad temperature range, suitable for various environmental conditions.
These features make the NTR4171PT1G suitable for a wide range of applications, including power management in portable devices, load switching, and general-purpose switching in electronic circuits.
Pinout
1. Gate (G): This pin controls the on/off state of the MOSFET. A voltage applied to the gate modulates the conductivity between the drain and source.
2. Drain (D): This is the output pin where the load is connected. Current flows from the drain to the source when the MOSFET is in the 'on' state.
3. Source (S): This pin serves as the common terminal through which current exits the MOSFET.
In summary, the NTR4171PT1G has three pins: gate, drain, and source, each fulfilling a specific role in controlling electrical flow through the device.